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1. (WO2017156304) TUNGSTEN POST-CMP CLEANING COMPOSITIONS
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Pub. No.: WO/2017/156304 International Application No.: PCT/US2017/021624
Publication Date: 14.09.2017 International Filing Date: 09.03.2017
IPC:
C11D 1/00 (2006.01) ,C11D 1/08 (2006.01) ,C11D 3/20 (2006.01) ,C11D 3/37 (2006.01) ,C11D 11/00 (2006.01) ,C23G 1/00 (2006.01) ,H01L 21/02 (2006.01)
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
1
Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
1
Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
02
Anionic compounds
04
Carboxylic acids or salts thereof
08
Polycarboxylic acids containing no nitrogen or sulfur
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
3
Other compounding ingredients of detergent compositions covered in group C11D1/101
16
Organic compounds
20
containing oxygen
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
3
Other compounding ingredients of detergent compositions covered in group C11D1/101
16
Organic compounds
37
Polymers
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
11
Special methods for preparing compositions containing mixtures of detergents
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
G
CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
1
Cleaning or pickling metallic material with solutions or molten salts
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
PARSON, Thomas [US/US]; US
JENG, Shrane-Ning (Shining) [US/US]; US
MEDD, Steve [US/US]; US
WHITE, Daniela [US/US]; US
WHITE, Michael [US/US]; US
FRYE, Don [US/US]; US
ENTEGRIS, INC. [US/US]; 129 Concord Road, Building 2 Billerica, MA 01821, US
Inventors:
PARSON, Thomas; US
JENG, Shrane-Ning (Shining); US
MEDD, Steve; US
WHITE, Daniela; US
WHITE, Michael; US
FRYE, Don; US
Agent:
GATES, Catherine, D.; US
PILLION, John, E.; US
SZYMANSKI, Brian; US
KISSOON, Nidhi, G.; US
Priority Data:
62/305,78109.03.2016US
Title (EN) TUNGSTEN POST-CMP CLEANING COMPOSITIONS
(FR) COMPOSITIONS DE NETTOYAGE POST-CMP À BASE DE TUNGSTÈNE
Abstract:
(EN) A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
(FR) L'invention porte sur une composition d'élimination et sur un procédé de nettoyage de particules et d'agents contaminants post-polissage mécano-chimique (CMP) d'un dispositif micro-électronique sur lequel se trouvent lesdites particules et lesdits contaminants. Les compositions d'élimination comprennent au moins un additif organique ; au moins un agent de chélation métallique ; et au moins un polyélectrolyte. La composition permet l'élimination très efficace des particules et de la matière contaminante post-CMP de la surface du dispositif micro-électronique sans altérer les matériaux à faible constante diélectrique k, le nitrure de silicium, les matériaux à faible constante diélectrique k, et les matériaux contenant du métal tels que des couches contenant du tungstène.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)