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1. (WO2017156163) SOUND-ASSISTED CRACK PROPAGATION FOR SEMICONDUCTOR WAFERING
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Pub. No.: WO/2017/156163 International Application No.: PCT/US2017/021418
Publication Date: 14.09.2017 International Filing Date: 08.03.2017
IPC:
G01N 29/04 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
29
Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
04
Analysing solids
Applicants:
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY [US/US]; Skysong-suite 200 1475 N. Scottsdale Road Scottsdale, AZ 85257, US
Inventors:
BERTONI, Mariana; US
COLL, Pablo, Guimera; US
Agent:
PAPROCKI, Andrew, J.; US
Priority Data:
62/305,39908.03.2016US
Title (EN) SOUND-ASSISTED CRACK PROPAGATION FOR SEMICONDUCTOR WAFERING
(FR) PROPAGATION DE FISSURE À ASSISTANCE SONORE POUR LA FORMATION DE TRANCHES DE SEMI-CONDUCTEUR
Abstract:
(EN) Systems and methods are described for controlled crack propagation in a material using ultrasonic waves. A first stress in applied to the material such that the first stress is below a critical point of the material and is insufficient to initiate cracking of the material. A controlled ultrasound wave is then applied to the material causing the total stress applied at a crack tip in the material to exceed the critical point. In some implementations, the controlled cracking is used for wafering of a material.
(FR) La présente invention concerne des systèmes et des procédés pour la propagation de fissure contrôlée dans un matériau au moyen d’ondes ultrasonores. Une première contrainte est appliquée au matériau de sorte que la première contrainte soit inférieure à un point critique du matériau et soit insuffisante pour initier une fissure du matériau. Une sonde ultrasonore contrôlée est ensuite appliquée au matériau de manière à amener la contrainte totale appliquée à une extrémité de fissure dans le matériau à dépasser le point critique. Dans certains modes de réalisation, la fissuration contrôlée est utilisée pour la formation de tranches d’un matériau.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)