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1. (WO2017155872) TECHNIQUES FOR MANIPULATING PATTERNED FEATURES USING IONS
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Pub. No.: WO/2017/155872 International Application No.: PCT/US2017/020909
Publication Date: 14.09.2017 International Filing Date: 06.03.2017
IPC:
H01L 21/027 (2006.01) ,H01L 21/3065 (2006.01) ,G03F 1/74 (2012.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
72
Repair or correction of mask defects
74
by charged particle beam [CPB], e.g. focused ion beam
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930, US
Inventors:
RUFFELL, Simon; US
DAI, Huixiong; US
LANG, Jun; US
HAUTALA, John; US
Agent:
DAISAK, Daniel, N.; US
Priority Data:
62/305,30808.03.2016US
Title (EN) TECHNIQUES FOR MANIPULATING PATTERNED FEATURES USING IONS
(FR) TECHNIQUES PERMETTANT DE MANIPULER DES ÉLÉMENTS À MOTIFS AU MOYEN D'IONS
Abstract:
(EN) A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape, feature location, and dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.
(FR) Cette invention concerne un procédé comprenant éventuellement : la formation d'un élément surfacique sur un substrat, l'élément surfacique présentant une forme, un emplacement, et une dimension dans une première direction dans un plan du substrat; le dépôt d'une couche comprenant un matériau de couche sur l'élément surfacique; et le fait de diriger des ions dans une exposition ionique à un angle d'incidence vers le substrat, l'angle d'incidence formant un angle non nul avec une perpendiculaire au plan du substrat. L'exposition ionique comprend les ions et des espèces neutres réactives, l'exposition ionique gravant la couche de matériau. Les ions heurtent une première partie de l'élément surfacique et ne heurtent pas une seconde partie de l'élément surfacique. Le procédé selon l'invention permet de générer un élément surfacique modifié, l'élément surfacique modifié étant différent de l'élément surfacique au moins en ce qui concerne : la dimension dans la première direction, la forme, ou l'emplacement.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)