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1. (WO2017155808) SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A PLASMA NITRIDE LAYER AND METHOD OF MANUFACTURE THEREOF

Pub. No.:    WO/2017/155808    International Application No.:    PCT/US2017/020634
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Sat Mar 04 00:59:59 CET 2017
IPC: H01L 21/762
H01L 21/02
Applicants: SUNEDISON SEMICONDUCTOR LIMITED
Inventors: KWESKIN, Sasha Joseph
Title: SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A PLASMA NITRIDE LAYER AND METHOD OF MANUFACTURE THEREOF
Abstract:
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.