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1. (WO2017155806) SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A PLASMA OXIDE LAYER AND METHOD OF MANUFACTURE THEREOF
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Pub. No.: WO/2017/155806 International Application No.: PCT/US2017/020623
Publication Date: 14.09.2017 International Filing Date: 03.03.2017
IPC:
H01L 21/762 (2006.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
SUNEDISON SEMICONDUCTOR LIMITED [SG/SG]; 9 Battery Road #15-01, Straits Trading Building Singapore 049910, SG
Inventors:
KWESKIN, Sasha Joseph; US
Agent:
SCHUTH, Richard A.; US
KEPPEL, Nicholas A.; US
MUNSELL, Michael G.; US
POLAND, Eric G.; US
RAYMOND JR., Donald D.; US
VANDER MOLEN, Michael J.; US
ALLEN, Derick E.; US
AMODIO, Lucas M.; US
ATKINS, Bruce T.; US
BEULICK, John S.; US
BLOCK, Zachary J.; US
BRENNAN, Patrick E.; US
BRIDGE, Richard L.; US
BROPHY, Richard L.; US
COYLE, Patrick J.; US
FITZGERALD, Daniel M.; US
FLOREK, Erin M.; US
GOFF, Christopher M.; US
HARPER, James D.; US
HARPER, Jesse S.; US
HEINEN JR., James M.; US
HENSON, James W.; US
HILMERT, Laura J.; US
HOEKEL, Jennifer E.; US
LONGMEYER, Michael H.; US
MCCOLLUM, Darin L.; US
MUELLER, Jacob R.; US
RASCHE, Patrick W.; US
REESER III, Robert B.; US
SLATER, Brian T.; US
SMELCER, Paul L.; US
SNIDER, Josh C.; US
SOOTER, Miranda M.; US
THOMAS, Mark A.; US
VANVLIET, David S.; US
WULLER, Adam R.; US
ZEE-CHENG, Brendan R.; US
ZYCHLEWICZ, William J.; US
DINGLEDINE, Grant A.; US
MCCAY, Michael G.; US
MOLLER-JACOBS, Rose L.; US
VANENGELEN, Catherine E.; US
Priority Data:
62/304,37807.03.2016US
Title (EN) SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A PLASMA OXIDE LAYER AND METHOD OF MANUFACTURE THEREOF
(FR) STRUCTURE DE SEMI-CONDUCTEUR SUR ISOLANT CONTENANT UNE COUCHE D'OXYDE DE PLASMA ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.
(FR) L'invention concerne un procédé de préparation d'une structure de semi-conducteur sur isolant contenant une couche d'oxynitrure de silicium ayant un gradient de concentration d'oxygène.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)