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1. (WO2017155750) ELECTRONIC CIRCUIT FOR COMPENSATING A SENSITIVITY DRIFT OF A HALL EFFECT ELEMENT DUE TO STRESS
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Pub. No.: WO/2017/155750 International Application No.: PCT/US2017/020066
Publication Date: 14.09.2017 International Filing Date: 01.03.2017
IPC:
G01R 27/08 (2006.01) ,G01R 33/00 (2006.01) ,G01L 1/22 (2006.01) ,H01L 21/02 (2006.01)
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27
Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
02
Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
08
Measuring resistance by measuring both voltage and current
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
G PHYSICS
01
MEASURING; TESTING
L
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
1
Measuring force or stress, in general
20
by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
22
using resistance strain gauges
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
ALLEGRO MICROSYSTEMS, LLC [US/US]; 115 Northeast Cutoff Worcester, Massachusetts 01606, US
Inventors:
CESARETTI, Juan, Manuel; AR
Agent:
CROWLEY, Judith C.; US
CROOKER, Albert, C.; US
ROBINSON, Kermit; US
MILMAN, Seth, A.; US
DURKEE, Paul, D.; US
CROWLEY, Judith, C.; US
MOOSEY, Anthony, T.; US
MOFFORD, Donald, F.; US
DALY, Christopher, S.; US
DOWNING, Marianne, M.; US
LANGE, Kristoffer, W.; US
FLINDERS, Matthew; US
Priority Data:
15/066,33110.03.2016US
Title (EN) ELECTRONIC CIRCUIT FOR COMPENSATING A SENSITIVITY DRIFT OF A HALL EFFECT ELEMENT DUE TO STRESS
(FR) CIRCUIT ÉLECTRONIQUE POUR COMPENSER UNE DÉRIVE DE SENSIBILITÉ D’UN ÉLÉMENT À EFFET HALL DUE À UNE CONTRAINTE
Abstract:
(EN) The present disclosure is directed to an electronic circuit having a Hall effect element and a resistor bridge, all disposed over a common semiconductor substrate. The resistor bridge includes a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series, and a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series. The first set of resistive elements and the second set of resistive elements can be coupled in parallel. The resistor bridge can be configured to sense a stress value of the Hall effect element.
(FR) La présente invention concerne un circuit électronique comportant un élément à effet Hall et un pont de résistance, tous deux disposés sur un substrat semi-conducteur commun. Le pont de résistance comprend un premier ensemble d’éléments résistifs comportant une première résistance épitaxiale verticale et une première résistance épitaxiale latérale couplées en série, et un deuxième ensemble d'éléments résistifs comportant une deuxième résistance épitaxiale verticale et une deuxième résistance épitaxiale latérale couplées en série. Le premier ensemble d'éléments résistifs et le deuxième ensemble d'éléments résistifs peuvent être couplés en parallèle. Le pont de résistance peut être configuré pour détecter une valeur de contrainte de l'élément à effet Hall.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)