Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017155557) HIGH SPEED AND HIGH VOLTAGE DRIVER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/155557 International Application No.: PCT/US2016/029622
Publication Date: 14.09.2017 International Filing Date: 27.04.2016
Chapter 2 Demand Filed: 15.12.2017
IPC:
H03K 17/10 (2006.01) ,H02M 1/088 (2006.01) ,H02M 3/07 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
10
Modifications for increasing the maximum permissible switched voltage
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1
Details of apparatus for conversion
08
Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
088
for the simultaneous control of series or parallel connected semiconductor devices
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
3
Conversion of dc power input into dc power output
02
without intermediate conversion into ac
04
by static converters
06
using resistors or capacitors, e.g. potential divider
07
using capacitors charged and discharged alternately by semiconductor devices with control electrode
Applicants:
PSEMI CORPORATION [US/US]; 9380 Carroll Park Drive San Diego, California 92121, US
Inventors:
WU, Gary Chunshien; US
Agent:
STEINFL, Alessandro; US
PIZZOLI, Antonio; c/o Societa Italiana Brevetti S.p.A. Via Carducci 8 20123 Milano Ml, IT
Priority Data:
15/066,64710.03.2016US
Title (EN) HIGH SPEED AND HIGH VOLTAGE DRIVER
(FR) CIRCUIT D'ATTAQUE RAPIDE ET HAUTE TENSION
Abstract:
(EN) Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.
(FR) L'invention concerne des systèmes, des procédés et des appareils pour polariser un circuit d'attaque rapide et haute tension utilisant uniquement des transistors basse tension. L'appareil et le procédé sont conçus pour commander des tensions de polarisation appliquées aux transistors basse tension pour qu'elles ne dépassent pas des tensions de fonctionnement des transistors basse tension, tout en permettant un fonctionnement du niveau continu (DC) jusqu'à une fréquence élevée du circuit d'attaque à haute tension. Une architecture empilable et modulaire du circuit d'attaque et d'étages de polarisation est utilisée, qui peut croître avec une exigence de tension plus élevée du circuit d'attaque. Une division de tension capacitive est utilisée pour une régulation de tension de polarisation rapide pendant des phases transitoires du circuit d'attaque, et une division de tension résistive est utilisée pour fournir une tension de polarisation en régime permanent. Une configuration en drain ouvert plus simple est également présentée qui peut être utilisée dans des modes d'excursion haute ou d'excursion basse.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)