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1. (WO2017155511) SPIN HALL EXCITED SPIN WAVE APPARATUS AND METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/155511 International Application No.: PCT/US2016/021262
Publication Date: 14.09.2017 International Filing Date: 07.03.2016
IPC:
H01L 43/02 (2006.01) ,H01L 43/10 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd. Santa Clara, CA 95054, US
Inventors:
NIKONOV, Dmitri, E.; US
MANIPATRUNI, Sasikanth; US
YOUNG, Ian, A.; US
Agent:
MUGHAL, Usman, A.; US
Priority Data:
Title (EN) SPIN HALL EXCITED SPIN WAVE APPARATUS AND METHOD
(FR) APPAREIL ET PROCÉDÉ À ONDES DE SPIN EXCITÉES PAR EFFET HALL DE SPIN
Abstract:
(EN) Described is an apparatus which comprises: a first ferromagnet (FM) layer having a first end and a second end; a spin-orbit-coupling (SOC) layer adjacent to the first FM layer near the first end; and an inverse SOC (ISOC) layer adjacent to the first FM layer near the second end. Described is a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave device, which comprises an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.
(FR) La présente invention concerne un appareil qui comprend : une première couche ferromagnétique (FM) qui possède une première extrémité et une seconde extrémité ; une couche à couplage spin-orbite (SOC) adjacente à la première couche FM à proximité de la première extrémité ; et une couche SOC inverse (ISOC) adjacente à la première couche FM à proximité de la seconde extrémité. L'invention concerne un système qui comprend : une mémoire ; un processeur couplé à la mémoire, le processeur possédant un dispositif à onde de spin, qui comprend un appareil selon l'appareil décrit ci-dessus ; et une interface sans fil pour permettre au processeur de communiquer avec un autre dispositif.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)