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1. (WO2017155469) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
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Pub. No.: WO/2017/155469 International Application No.: PCT/SG2017/050115
Publication Date: 14.09.2017 International Filing Date: 09.03.2017
IPC:
H01L 21/00 (2006.01) ,H05K 3/00 (2006.01) ,C23F 1/00 (2006.01) ,C25D 3/12 (2006.01) ,C25D 3/40 (2006.01) ,C25D 3/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1
Etching metallic material by chemical means
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3
Electroplating; Baths therefor
02
from solutions
12
of nickel or cobalt
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3
Electroplating; Baths therefor
02
from solutions
38
of copper
40
from cyanide baths
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3
Electroplating; Baths therefor
02
from solutions
46
of silver
Applicants:
ROKKO LEADFRAMES PTE LTD [SG/SG]; 61 Kaki Bukit Road 2, Singapore 417869, SG
Inventors:
YARANIAN, Ravi; SG
DHAMODARAN, Sangeetha; SG
Agent:
KINNAIRD, James Welsh; SG
Priority Data:
10201601865X10.03.2016SG
Title (EN) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
(FR) DISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION
Abstract:
(EN) The present invention relate to a leadframe or flexible printed circuit (FPC) and a method of manufacturing a leadframe or FPC having a GAM value of greater than 2.0. The method comprises subjecting an electrolytically cleaned leadframe or FPC to a microetching step to provide a microetched leadframe or FPC or subjecting an electrolytically cleaned leadframe or FPC to a copper plating process to provide a double copper plated leadframe or FPC. The microetched leadframe or double copper plated leadframe or FPC is then subjected to a bright-deposition nickel plating process, a silver strike electoplating process, a bright silver plating process, and then a silver stripping process to provide a mirror bright silver leadframe or FPC.
(FR) La présente invention concerne une grille de connexion ou un circuit imprimé souple (FPC) et un procédé de fabrication d'une grille de connexion ou d'un FPC ayant une valeur de GAM supérieure à 2,0. Le procédé consiste à soumettre une grille de connexion ou un FPC nettoyés par électrolyse à une étape de microgravure pour obtenir une grille de connexion ou un FPC microgravés, ou soumettre une grille de connexion ou un FPC nettoyés par électrolyse à un processus de placage au cuivre pour fournir une grille de connexion ou un FPC à double placage de cuivre. La grille de connexion microgravée ou la grille de connexion ou le FPC à double placage de cuivre sont ensuite soumis à un processus de placage par dépôt brillant de nickel, un processus d'électrodéposition d'argent d'amorçage, un processus de placage à l'argent brillant, puis un processus de décapage d'argent pour fournir une grille de connexion ou un FPC à l'argent brillant miroir.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)