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1. (WO2017155447) A SOLAR CELL COMPRISING GRAINS OF A DOPED SEMICONDUCTING MATERIAL AND A METHOD FOR MANUFACTURING THE SOLAR CELL
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Pub. No.: WO/2017/155447 International Application No.: PCT/SE2017/050193
Publication Date: 14.09.2017 International Filing Date: 01.03.2017
IPC:
H01G 9/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9
Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20
Light-sensitive devices
Applicants:
EXEGER OPERATIONS AB [SE/SE]; P.O. Box 55597 102 04 Stockholm, SE
Inventors:
LINDSTRÖM, Henrik; SE
Agent:
SWEA IP LAW AB; Box 44 SE-151 21 Södertälje, SE
Priority Data:
1650331-010.03.2016SE
Title (EN) A SOLAR CELL COMPRISING GRAINS OF A DOPED SEMICONDUCTING MATERIAL AND A METHOD FOR MANUFACTURING THE SOLAR CELL
(FR) CELLULE SOLAIRE COMPRENANT DES GRAINS D’UN MATÉRIAU SEMI-CONDUCTEUR DOPÉ ET PROCÉDÉ DE FABRICATION DE LA CELLULE SOLAIRE
Abstract:
(EN) The present invention relates to a solar cell and a method for manufacturing thereof. The solar cell comprises a porous insulating substrate (2), a first porous conducting layer (4) and a second porous conducting layer (6) disposed on opposite sides of the porous insulating substrate, a light absorbing layer (8) in electrical contact with the first conducting layer, and an electrolyte integrally positioned through the porous conductive layers, the porous insulating substrate and the light absorbing layer to transfer charge carriers between the second conducting layer and the light absorbing layer. The light absorbing layer (8) comprises a plurality of grains (10) of a doped semiconducting material.
(FR) La présente invention concerne une cellule solaire et son procédé de fabrication. La cellule solaire comprend un substrat d’isolation poreux (2), une première couche conductrice poreuse (4) et une seconde couche conductrice poreuse (6) disposées sur des côtés opposés du substrat d’isolation poreux, une couche d’absorption de lumière (8) en contact électrique avec la première couche conductrice, et un électrolyte positionné d’un seul tenant à travers les couches conductrices poreuses, le substrat d’isolation poreux et la couche d’absorption de lumière étant conçus pour transférer des supports de charge entre la seconde couche conductrice et la couche d’absorption de lumière. La couche d’absorption de lumière (8) comprend une pluralité de grains (10) d’un matériau semi-conducteur dopé.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)