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1. (WO2017155393) SOLAR CELL WITH DOPED POLYSILICON SURFACE AREAS AND METHOD FOR MANUFACTURING THEREOF
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Pub. No.: WO/2017/155393 International Application No.: PCT/NL2017/050138
Publication Date: 14.09.2017 International Filing Date: 07.03.2017
IPC:
H01L 31/0368 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/072 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
036
characterised by their crystalline structure or particular orientation of the crystalline planes
0368
including polycrystalline semiconductors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND [NL/NL]; Westerduinweg 3 1755 LE Petten, NL
Inventors:
GEERLIGS, Lambert Johan; NL
BRONSVELD, Paula Catharina Petronella; NL
WU, Yu; NL
Agent:
NEDERLANDSCH OCTROOIBUREAU; P.O. Box 29720 2502 LS The Hague, NL
Priority Data:
201638207.03.2016NL
Title (EN) SOLAR CELL WITH DOPED POLYSILICON SURFACE AREAS AND METHOD FOR MANUFACTURING THEREOF
(FR) CELLULE SOLAIRE À ZONES DE SURFACE EN POLYSILICIUM DOPÉ ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A method for manufacturing a front floating emitter type solar cell includes providing a silicon substrate (10) of a first or second conductivity type with a front surface (13) and a rear surface (11); creating a tunneling oxide layer (12) on the rear surface of the silicon substrate; depositing a polysilicon layer (14) on at least the rear surface; creating a doped area of the first conductivity type in an area part of the polysilicon layer on the rear surface; forming in or on the front surface a doped layer (23) of the second conductivity type opposite to the first conductivity type. In the area part of the polysilicon layer on the rear surface, a concentration of the impurity of the first conductivity type is larger than a concentration of the impurity of the second conductivity type, and the area part of the polysilicon layer on the rear surface has conductivity of the first conductivity type.
(FR) La présente invention concerne un procédé de fabrication d'une cellule solaire de type émetteur flottant avant consistant à fournir un substrat de silicium (10) d'un premier ou d'un second type de conductivité doté d'une surface avant (13) et d'une surface arrière (11) ; à créer une couche d'oxyde à effet tunnel (12) sur la surface arrière du substrat en silicium ; à déposer une couche de polysilicium (14) sur au moins la surface arrière ; à créer une zone dopée du premier type de conductivité dans une partie de zone de la couche de polysilicium sur la surface arrière ; à former dans ou sur la surface avant une couche dopée (23) du second type de conductivité opposée au premier type de conductivité. Dans la partie de zone de la couche de polysilicium sur la surface arrière, une concentration de l'impureté du premier type de conductivité est supérieure à une concentration de l'impureté du second type de conductivité, et la partie de zone de la couche de polysilicium sur la surface arrière présente une conductivité du premier type de conductivité.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)