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1. (WO2017155310) METHOD FOR FILLING VIA HOLE OF CERAMIC SUBSTRATE AND CERAMIC SUBSTRATE VIA HOLE FILLER FORMED THEREBY
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Pub. No.: WO/2017/155310 International Application No.: PCT/KR2017/002529
Publication Date: 14.09.2017 International Filing Date: 08.03.2017
IPC:
H01L 21/768 (2006.01) ,H01L 21/48 (2006.01) ,H01L 21/268 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/288 (2006.01) ,H01L 21/285 (2006.01)
[IPC code unknown for H01L 21/768][IPC code unknown for H01L 21/48][IPC code unknown for H01L 21/268][IPC code unknown for H01L 21/02][IPC code unknown for H01L 21/288][IPC code unknown for H01L 21/285]
Applicants:
주식회사 아모센스 AMOSENSE CO., LTD. [KR/KR]; 충청남도 천안시 서북구 직산읍 4산단5길 90, 19-1블럭 (천안제4지방산업단지) (Cheonan the fourth Local Industrial Complex) 19-1 Block, 90, 4sandan 5-gil, Jiksan-eup, Seobuk-gu Cheonan-si, Chungcheongnam-do 31040, KR
Inventors:
우경환 WOO, Kyung-Whan; KR
박익성 PARK, Ik-Seong; KR
조현춘 CHO, Hyeon-Choon; KR
Agent:
한양특허법인 HANYANG PATENT FIRM; 서울시 강남구 논현로38길 12, 한양빌딩 Hanyang building, 12, Nonhyeonro 38-gil, Gangnam-gu Seoul 06296, KR
Priority Data:
10-2016-002753908.03.2016KR
Title (EN) METHOD FOR FILLING VIA HOLE OF CERAMIC SUBSTRATE AND CERAMIC SUBSTRATE VIA HOLE FILLER FORMED THEREBY
(FR) PROCÉDÉ DE REMPLISSAGE DE TROU D'INTERCONNEXION DE SUBSTRAT CÉRAMIQUE ET CHARGE DE TROU D'INTERCONNEXION DE SUBSTRAT CÉRAMIQUE FORMÉE PAR CE PROCÉDÉ
(KO) 세라믹 기판의 비아홀 충진 방법 및 이를 이용하여 충진된 세라믹 기판의 비아홀 충진체
Abstract:
(EN) The present invention relates to a method for filling a via hole of a ceramic substrate and a ceramic substrate via hole filler formed thereby. A via hole is formed on a ceramic substrate, a conductor is formed inside the via hole, and the conductor is then melted in a vacuum state and cooled again. As such, the via hole of the ceramic substrate can be simply filled with a conductor without a pore. Consequently, the ceramic substrate manufacturing process is simplified, manufacturing costs are reduced, the operating reliability of the ceramic substrate is improved, and stable operating reliability is ensured when used for a high-power semiconductor module.
(FR) La présente invention concerne un procédé de remplissage d'un trou d'interconnexion d'un substrat céramique et une charge de trou d'interconnexion de substrat céramique formée par ce procédé. Un trou d'interconnexion est formé sur un substrat céramique, un conducteur est formé à l'intérieur du trou d'interconnexion, et le conducteur est ensuite fondu dans un état sous vide et refroidi à nouveau. Ainsi, le trou d'interconnexion du substrat céramique peut être simplement rempli d'un conducteur sans pore. Par conséquent, le procédé de fabrication de substrat céramique est simplifié, les coûts de fabrication sont réduits, la fiabilité de fonctionnement du substrat céramique est améliorée, et une fiabilité de fonctionnement stable est assurée lorsqu'il est utilisé pour un module à semi-conducteur de puissance élevée.
(KO) 본 발명은 세라믹 기판의 비아홀 충진 방법 및 이를 이용하여 충진된 세라믹 기판의 비아홀 충진체에 관한 것으로 세라믹 기재에 비아홀을 형성하고, 상기 비아홀 내에 도전체를 형성한 후 진공 상태에서 상기 도전체를 멜팅시키고 다시 냉각시킴으로써 세라믹 기판의 비아홀을 기공없이 간단하게 도전체로 충진시킬 수 있어 세라믹 기판의 제조과정을 단순화하고, 제조 비용을 절감하며, 세라믹 기판의 작동 신뢰성을 향상시키고, 고전력 반도체 모듈에서 사용 시 안정적인 작동 신뢰성을 확보한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)