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|1. (WO2017155289) PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE|
|Title:||PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE|
The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.