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1. (WO2017155289) PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE

Pub. No.:    WO/2017/155289    International Application No.:    PCT/KR2017/002470
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Wed Mar 08 00:59:59 CET 2017
IPC: H01L 51/52
H01L 51/56
H01L 51/00
H01L 21/02
Applicants: TES CO.,LTD
주식회사 테스
Inventors: LEE, Hong-Jae
이홍재
KIM, Jong-Hwan
김종환
SHIM, Woo-Pil
심우필
LEE, Woo-Jin
이우진
YOON, Sung-Yean
윤성연
LEE, Don-Hee
이돈희
Title: PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE
Abstract:
The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.