Search International and National Patent Collections

1. (WO2017155215) NEAR-ULTRAVIOLET LIGHT-EMITTING SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR TEMPLATE USED THEREFOR

Pub. No.:    WO/2017/155215    International Application No.:    PCT/KR2017/001471
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Sat Feb 11 00:59:59 CET 2017
IPC: H01L 33/02
H01L 33/22
H01L 33/36
Applicants: SOFT-EPI INC.
주식회사 소프트에피
Inventors: PARK, Joong Seo
박중서
HWANG, Sung Min
황성민
CHO, In Sung
조인성
LIM, Won Taeg
임원택
KIM, Doo Soo
김두수
SHIN, Sun Hye
신선혜
LEE, Seong Hyeon
이성현
Title: NEAR-ULTRAVIOLET LIGHT-EMITTING SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR TEMPLATE USED THEREFOR
Abstract:
The present disclosure relates to a group III nitride semiconductor template for a near-ultraviolet (300-400 nm) light-emitting semiconductor light-emitting element, and a near-ultraviolet light-emitting semiconductor light-emitting element using the same, the template comprising: a growth substrate; a seed layer formed of AlxGa1-xN(0y); and a monocrystalline group III nitride semiconductor layer formed of AlyGa1-yN(y>0).