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1. (WO2017155122) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/155122    International Application No.:    PCT/JP2017/009843
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Sat Mar 11 00:59:59 CET 2017
IPC: H01L 29/78
H01L 21/336
H01L 21/76
H01L 21/8234
H01L 27/06
H01L 29/06
H01L 29/739
H01L 29/861
H01L 29/868
Applicants: FUJI ELECTRIC CO., LTD.
富士電機株式会社
Inventors: NAITO Tatsuya
内藤 達也
Title: SEMICONDUCTOR DEVICE
Abstract:
Provided is a semiconductor device with facilitated hole extraction. The semiconductor device is equipped with a semiconductor substrate having a drift region and a base region, a transistor section formed on the semiconductor substrate, and a diode section formed on the semiconductor substrate adjacent to the transistor section. A plurality of trenches arranged along respectively predetermined arrangement directions therefor and a plurality of mesas formed between each of the trenches are formed in the transistor section and the diode section. From among the plurality of mesas, at least one border mesa on the border between the transistor section and the diode section is provided with, on the top surface of the semiconductor substrate, a contact region having a higher concentration than the base region. The area of the contact region of the border mesa is larger than the areas of the contact regions of the other mesas.