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|1. (WO2017155122) SEMICONDUCTOR DEVICE|
|Applicants:||FUJI ELECTRIC CO., LTD.
Provided is a semiconductor device with facilitated hole extraction. The semiconductor device is equipped with a semiconductor substrate having a drift region and a base region, a transistor section formed on the semiconductor substrate, and a diode section formed on the semiconductor substrate adjacent to the transistor section. A plurality of trenches arranged along respectively predetermined arrangement directions therefor and a plurality of mesas formed between each of the trenches are formed in the transistor section and the diode section. From among the plurality of mesas, at least one border mesa on the border between the transistor section and the diode section is provided with, on the top surface of the semiconductor substrate, a contact region having a higher concentration than the base region. The area of the contact region of the border mesa is larger than the areas of the contact regions of the other mesas.