Search International and National Patent Collections

1. (WO2017155032) GALLIUM NITRIDE STRUCTURE, PIEZOELECTRIC ELEMENT, METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT, AND RESONATOR USING PIEZOELECTRIC ELEMENT

Pub. No.:    WO/2017/155032    International Application No.:    PCT/JP2017/009459
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Fri Mar 10 00:59:59 CET 2017
IPC: H03H 9/17
B81B 3/00
B81C 1/00
H01L 41/047
H01L 41/09
H01L 41/113
H01L 41/187
H01L 41/29
H01L 41/316
H03H 3/007
Applicants: MURATA MANUFACTURING CO., LTD.
株式会社村田製作所
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
国立研究開発法人産業技術総合研究所
Inventors: UMEDA, Keiichi
梅田 圭一
MIZUNO, Takaaki
水野 孝昭
AIDA, Yasuhiro
會田 康弘
UEHARA, Masato
上原 雅人
NAGASE, Toshimi
長瀬 智美
AKIYAMA, Morito
秋山 守人
Title: GALLIUM NITRIDE STRUCTURE, PIEZOELECTRIC ELEMENT, METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT, AND RESONATOR USING PIEZOELECTRIC ELEMENT
Abstract:
In a gallium nitride structure using GaN as a piezoelectric body, a lower electrode can be provided, which can be formed by an easy process. The present invention comprises: a substrate; a gallium nitride layer principally composed of gallium nitride, provided facing the substrate; and a first electrode which is provided between the gallium nitride layer and the substrate, which includes at least one hafnium layer principally composed of elemental metal hafnium, and which is in contact with the gallium nitride layer at one or more hafnium layers.