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1. (WO2017154774) ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT

Pub. No.:    WO/2017/154774    International Application No.:    PCT/JP2017/008487
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Sat Mar 04 00:59:59 CET 2017
IPC: C04B 35/581
C23C 14/06
C23C 26/00
H01L 23/12
H01L 23/15
Applicants: SHIBAURA INSTITUTE OF TECHNOLOGY
学校法人 芝浦工業大学
TOSHIBA MATERIALS CO., LTD.
東芝マテリアル株式会社
Inventors: YUMOTO Atsushi
湯本 敦史
SHIMIZU Mari
清水 麻里
INOUE Tetsuo
井上 哲夫
HINO Takashi
日野 高志
SAITO Shuichi
齋藤 秀一
Title: ALUMINUM NITRIDE FILM, METHOD FOR MANUFACTURING ALUMINUM NITRIDE FILM, AND HIGH-BREAKDOWN-VOLTAGE COMPONENT
Abstract:
An aluminum nitride film according to the present invention includes polycrystalline aluminum nitride. The dielectric strength voltage of the aluminum nitride film is at least 100 kV/mm.