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1. (WO2017154600) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME
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Pub. No.: WO/2017/154600 International Application No.: PCT/JP2017/006882
Publication Date: 14.09.2017 International Filing Date: 23.02.2017
IPC:
G03F 7/11 (2006.01) ,C08G 63/58 (2006.01) ,C08G 63/688 (2006.01) ,G03F 7/09 (2006.01) ,G03F 7/20 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
63
Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
02
Polyesters derived from hydroxy carboxylic acids or from polycarboxylic acids and polyhydroxy compounds
12
derived from polycarboxylic acids and polyhydroxy compounds
52
Polycarboxylic acids or polyhydroxy compounds in which at least one of the two components contains aliphatic unsaturation
56
Polyesters derived from ester-forming derivatives of polycarboxylic acids or of polyhydroxy compounds, other than from esters thereof
58
Cyclic ethers; Cyclic carbonates; Cyclic sulfites
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
63
Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
68
Polyesters containing atoms other than carbon, hydrogen, and oxygen
688
containing sulfur
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
日産化学工業株式会社 NISSAN CHEMICAL INDUSTRIES, LTD. [JP/JP]; 東京都千代田区神田錦町三丁目7番地1 7-1, Kanda-Nishiki-cho 3-chome, Chiyoda-ku, Tokyo 1010054, JP
Inventors:
緒方 裕斗 OGATA, Hiroto; JP
臼井 友輝 USUI, Yuki; JP
田村 護 TAMURA, Mamoru; JP
岸岡 高広 KISHIOKA, Takahiro; JP
Agent:
特許業務法人はなぶさ特許商標事務所 HANABUSA PATENT & TRADEMARK OFFICE; 東京都千代田区神田駿河台3丁目2番地 新御茶ノ水アーバントリニティ Shin-Ochanomizu Urban Trinity, 2, Kandasurugadai 3-chome, Chiyoda-ku, Tokyo 1010062, JP
Priority Data:
2016-04596509.03.2016JP
Title (EN) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME
(FR) COMPOSITION POUR LA FORMATION D'UN FILM DE SOUS-COUCHE DE RÉSIST ET PROCÉDÉ DE FORMATION D'UN MOTIF DE RÉSIST À L'AIDE DE CELLE-CI
(JA) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
Abstract:
(EN) [Problem] To provide a novel composition for forming a resist underlayer film which has a high dry etching rate and functions as an anti-reflection film during light exposure, while enabling embedment of a recess having a narrow space and a high aspect ratio. [Solution] A composition for forming a resist underlayer film, which contains a copolymer having a structural unit represented by formula (1), a crosslinkable compound, a crosslinking catalyst and a solvent. (In the formula, each of R1 and R2 independently represents an alkylene group having 1-3 carbon atoms or a single bond; Z represents an -O- group, an -S- group or an -S-S- group; and Ar represents an arylene group.)
(FR) Le problème décrit par l'invention consiste à fournir une nouvelle composition pour la formation d'un film de sous-couche de résist qui présente un taux de gravure sèche élevé et fonctionne comme un film anti-reflet permettant l'incorporation d'un évidement ayant un espace étroit et un rapport d'aspect élevé. La solution selon l'invention porte sur une composition pour la formation d'un film de sous-couche de résist qui contient un copolymère ayant une unité structurelle représentée par la formule (1), un composé pouvant être réticulé, un catalyseur de réticulation et un solvant. (Dans la formule, chacun de R1 et R2 représente indépendamment un groupe alkylène ayant de 1 à 3 atomes de carbone ou une liaison simple ; Z représente un groupe -O-, un groupe -S- ou un groupe -S-S- ; et Ar représente un groupe arylène.)
(JA) 【課題】 大きいドライエッチング速度を有し、露光時に反射防止膜として機能すると共に、狭スペース及び高アスペクト比の凹部を埋め込むことができる、新規なレジスト下層膜形成組成物を提供する。 【解決手段】 下記式(1)で表される構造単位を有する共重合体、架橋性化合物、架橋触媒及び溶剤を含む、レジスト下層膜形成組成物。 (式中、R及びRはそれぞれ独立に炭素原子数1乃至3のアルキレン基又は単結合を表し、Zは-O-基、-S-基又は-S-S-基を表し、Arはアリーレン基を表す。)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)