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1. (WO2017154545) FILM FORMATION MATERIAL FOR RESIST PROCESS, PATTERN FORMATION METHOD, AND POLYMER

Pub. No.:    WO/2017/154545    International Application No.:    PCT/JP2017/006231
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Tue Feb 21 00:59:59 CET 2017
IPC: G03F 7/11
G03F 7/32
H01L 21/027
C08G 77/14
Applicants: JSR CORPORATION
JSR株式会社
Inventors: ANNO Yuusuke
庵野 祐亮
SEKO Tomoaki
瀬古 智昭
NISHIKORI Katsuaki
錦織 克聡
Title: FILM FORMATION MATERIAL FOR RESIST PROCESS, PATTERN FORMATION METHOD, AND POLYMER
Abstract:
The purpose of the present invention is to provide: a film formation material for a resist process in which it is possible to form a silicon-containing film that has exceptional adhesion to resist films, the resist patterns having excellent shape and the incidence of collapse being low; a pattern formation method in which the film formation material for a resist process is used; and a polymer suitable as such a film formation material for a resist process. This film formation material for a resist process contains a polymer having structural units derived from silane monomers that have two or more protected alcoholic hydroxyl groups, and an organic solvent. This pattern formation method is provided with: a step for forming a silicon-containing film on at least one surface of a substrate using a film formation material for a resist process; a step for forming a resist film on the surface of the silicon-containing film opposite to the substrate using a radiation-sensitive resin composition that includes a radiation-sensitive acid generator and a polymer having an acid-dissociative group; a step for exposing the resist film; and a step for developing the exposed resist film.