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1. (WO2017154345) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
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Pub. No.: WO/2017/154345 International Application No.: PCT/JP2017/000986
Publication Date: 14.09.2017 International Filing Date: 13.01.2017
IPC:
G03F 7/004 (2006.01) ,C07C 309/12 (2006.01) ,C07C 309/17 (2006.01) ,C07C 381/12 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
309
Sulfonic acids; Halides, esters, or anhydrides thereof
01
Sulfonic acids
02
having sulfo groups bound to acyclic carbon atoms
03
of an acyclic saturated carbon skeleton
07
containing oxygen atoms bound to the carbon skeleton
12
containing esterified hydroxy groups bound to the carbon skeleton
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
309
Sulfonic acids; Halides, esters, or anhydrides thereof
01
Sulfonic acids
02
having sulfo groups bound to acyclic carbon atoms
03
of an acyclic saturated carbon skeleton
17
containing carboxyl groups bound to the carbon skeleton
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
381
Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/-C07C337/142
12
Sulfonium compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
西尾 亮 NISHIO Ryo; JP
小島 雅史 KOJIMA Masafumi; JP
後藤 研由 GOTO Akiyoshi; JP
土村 智孝 TSUCHIMURA Tomotaka; JP
白川 三千紘 SHIRAKAWA Michihiro; JP
加藤 啓太 KATO Keita; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
三和 晴子 MIWA Haruko; JP
伊東 秀明 ITOH Hideaki; JP
三橋 史生 MITSUHASHI Fumio; JP
Priority Data:
2016-04358607.03.2016JP
Title (EN) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
(FR) COMPOSITION DE RÉSINE SENSIBLE AU RAYONNEMENT OU SENSIBLE À LA LUMIÈRE ACTIVE, FILM PHOTORÉSISTANT, PROCÉDÉ DE FORMATION DE MOTIFS ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
Abstract:
(EN) The present invention provides: an active light sensitive or radiation sensitive resin composition which is capable of forming a pattern that has low LWR and is suppressed in collapsing; a resist film; a pattern forming method; and a method for manufacturing an electronic device. An active light sensitive or radiation sensitive resin composition according to the present invention contains a photoacid generator represented by general formula (1) or a resin having a residue that is obtained by removing one hydrogen atom from the photoacid generator represented by general formula (1).
(FR) La présente invention concerne : une composition de résine sensible au rayonnement ou sensible à la lumière active, apte à former un motif qui présente un faible LWR et dont l'effondrement est supprimé ; un film photorésistant ; un procédé de formation de motifs ; et un procédé de fabrication d'un dispositif électronique. Une composition de résine sensible au rayonnement ou sensible à la lumière active selon la présente invention contient un générateur de photo-acide représenté par la formule générale (1) ou une résine ayant un résidu qui est obtenu en éliminant un atome d'hydrogène du générateur de photo-acide représenté par la formule générale (1).
(JA) 本発明は、LWRの小さいパターンを形成することができ、かつ、形成されたパターンの倒れがより抑制された感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法を提供する。本発明の感活性光線性又は感放射線性樹脂組成物は、一般式(1)で表される光酸発生剤、又は、一般式(1)で表される光酸発生剤から1個の水素原子を取り除いた残基を有する樹脂、を含有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)