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1. (WO2017154289) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
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Pub. No.: WO/2017/154289 International Application No.: PCT/JP2016/085662
Publication Date: 14.09.2017 International Filing Date: 01.12.2016
IPC:
H01L 23/48 (2006.01) ,B23K 1/00 (2006.01) ,B23K 1/14 (2006.01) ,H01L 23/40 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,B23K 101/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
1
Soldering, e.g. brazing, or unsoldering
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
1
Soldering, e.g. brazing, or unsoldering
14
specially adapted for soldering seams
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
40
Mountings or securing means for detachable cooling or heating arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
101
Articles made by soldering, welding or cutting
36
Electric or electronic devices
40
Semiconductor devices
Applicants:
株式会社デンソー DENSO CORPORATION [JP/JP]; 愛知県刈谷市昭和町1丁目1番地 1-1, Showa-cho, Kariya-city Aichi 4488661, JP
Inventors:
野村 匠 NOMURA Takumi; JP
小林 渉 KOBAYASHI Wataru; JP
Agent:
金 順姫 JIN Shunji; JP
Priority Data:
2016-04739110.03.2016JP
Title (EN) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置及び半導体装置の製造方法
Abstract:
(EN) A semiconductor device of the present invention is provided with: a heat generating section including a semiconductor chip on which electrodes are formed; a pair of first member and a second member (19), which are disposed to sandwich the heat generating section; and a third member. The second member has: a main body section (190) electrically connected to the heat generating section via a first solder; and an extending section (191) extending from the main body section. The third member is electrically connected to the extending section via a second solder. The main body section has a first groove section (193) formed to surround a connecting region (192) of the first solder. The extending section has: a second groove section (196) formed in a part of a surrounding region (195) surrounding a connecting region (194) of the second solder; and a recessed and protruding oxide film (197) formed in a region of the surrounding region, said region excluding the second groove section.
(FR) Un dispositif à semi-conducteur selon la présente invention comporte : une section de génération de chaleur comprenant une puce de semi-conducteur sur laquelle sont formées des électrodes ; une paire constituée d'un premier élément et d'un deuxième élément (19), qui sont disposés pour prendre en sandwich la section de génération de chaleur ; et un troisième élément. Le deuxième élément comporte : une section de corps principal (190) connectée électriquement à la section de génération de chaleur par l'intermédiaire d'une première soudure ; et une section d'extension (191) s'étendant à partir de la section de corps principal. Le troisième élément est connecté électriquement à la section d'extension par l'intermédiaire d'une seconde soudure. La section de corps principal a une première section de rainure (193) formée pour entourer une région de connexion (192) de la première soudure. La section d'extension comporte : une seconde section de rainure (196) formée dans une partie d'une région environnante (195) entourant une région de connexion (194) de la seconde soudure ; et un film d'oxyde en retrait et en saillie (197) formé dans une région de la région environnante, ladite région excluant la seconde section de rainure.
(JA) 半導体装置は、電極が形成された半導体チップを含む発熱部、発熱部を挟むように配置される一対の第1部材と第2部材(19)及び第3部材を備える。第2部材は、発熱部と第1はんだを介して電気的に接続された本体部(190)及び本体部から延設された延設部(191)を有する。第3部材は、延設部と第2はんだを介して電気的に接続される。本体部は、第1はんだの接続領域(192)を囲むように形成された第1溝部(193)を有する。延設部は、第2はんだの接続領域(194)を囲む周囲領域(195)の一部に形成された第2溝部(196)及び周囲領域の第2溝部以外の領域に形成された凹凸酸化膜(197)を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)