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1. (WO2017154173) SUBSTRATE SUCTION STAGE, SUBSTRATE TREATMENT APPARATUS, AND SUBSTRATE TREATMENT METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/154173 International Application No.: PCT/JP2016/057627
Publication Date: 14.09.2017 International Filing Date: 10.03.2016
IPC:
H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3,Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
松村 民雄 MATSUMURA, Tamio; JP
Agent:
高田 守 TAKADA, Mamoru; JP
Priority Data:
Title (EN) SUBSTRATE SUCTION STAGE, SUBSTRATE TREATMENT APPARATUS, AND SUBSTRATE TREATMENT METHOD
(FR) ÉTAGE D’ASPIRATION DE SUBSTRAT, APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板吸着ステージ、基板処理装置、基板処理方法
Abstract:
(EN) A substrate suction stage of the present invention is characterized by being provided with: a substrate supporting section, which has an upper surface, and in which a hollow is formed inside, an ejection hole reaching the upper surface from the hollow is formed, and a suction hole connecting the ejection hole and the upper surface is formed; and a gas supply section for supplying a gas to the inside of the hollow. The substrate suction stage is also characterized in that the ejection hole surrounds the suction hole in plan view, and the gas in the suction hole is discharged to the outside via the ejection hole when the gas is supplied to the hollow.
(FR) La présente invention concerne un étage d’aspiration de substrat qui est caractérisé en ce qu’il comporte : une section de support de substrat, qui a une surface supérieure, et dans laquelle un creux est formé à l’intérieur, un trou d’éjection atteignant la surface supérieure à partir du creux est formé, et un trou d’aspiration reliant le trou d’éjection et la surface supérieure est formé ; et une section d’alimentation en gaz pour fournir un gaz à l’intérieur du creux. L’étage d’aspiration de substrat est également caractérisé en ce que le trou d’éjection entoure le trou d’aspiration dans une vue en plan, et le gaz dans le trou d’aspiration est évacué à l’extérieur par l’intermédiaire du trou d’éjection lorsque le gaz est fourni au creux.
(JA) 基板吸着ステージは、上面を有し、内部に空洞が形成され、該空洞から該上面に至る噴出穴が形成され、該噴出穴と該上面をつなぐ吸着穴が形成された基板支持部と、該空洞の中に気体を供給する気体供給部と、を備え、該噴出穴は平面視で該吸着穴を囲み、該空洞に気体が供給されると、該吸着穴の気体が該噴出穴を介して外部に放出されることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)