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1. (WO2017154072) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/154072    International Application No.:    PCT/JP2016/056975
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Tue Mar 08 00:59:59 CET 2016
IPC: H01L 23/29
H01L 23/31
H01L 25/07
H01L 25/18
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: KAJIHARA Takanobu
梶原 孝信
OMAE Katsuhiko
大前 勝彦
FUSHIE Shunsuke
伏江 俊祐
KANETO Yoshinori
金藤 芳典
SUZUKI Junya
鈴木 淳也
OKABE Yuki
岡部 有紀
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device of the present invention is provided with a first insulating resin section (7) for sealing a mounting surface (2a) of a lead frame (2), and a second insulating resin section (8) for sealing a heat dissipating surface (2b) of the lead frame. The second insulting resin section (8) contains a filler (18) having a maximum diameter of 0.02-0.075mm, the second insulating resin section (8) has a thin portion forming section (10) that is formed in contact with the heat dissipating surface (2b) of the lead frame (2), and the thickness of the thin portion forming section (10) is 1.1 to 2 times the maximum diameter of the filler (18). The semiconductor device has a mixed layer, in which the resin of the first insulating resin section (7) and that of the second insulating resin section (8) are mixed at an interface between the first insulating resin section and the second insulating resin section.