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1. (WO2017154020) ASYMMETRIC PHONONIC CRYSTAL (PNC) TETHERING FOR RADIO FREQUENCY (RF) MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) RESONATOR
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Pub. No.: WO/2017/154020 International Application No.: PCT/IN2017/050017
Publication Date: 14.09.2017 International Filing Date: 12.01.2017
IPC:
H03H 9/00 (2006.01) ,H01L 29/739 (2006.01) ,H03H 9/05 (2006.01) ,H03H 9/02 (2006.01) ,H03H 9/15 (2006.01) ,H03H 9/24 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
05
Holders; Supports
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15
Constructional features of resonators consisting of piezo-electric or electrostrictive material
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
24
Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive
Applicants:
INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT MADRAS) [IN/IN]; The Dean, Industrial Consultancy & Sponsored Research [IC&SR], Indian Institute of Technology Madras, IIT PO,Tamil Nadu Chennai 600036, IN
Inventors:
DASGUPTA, Amitava; IN
NAIR, Deleep; IN
RAWAT, Udit; IN
Agent:
KISHORE NARASANI, Arun; IN
Priority Data:
20164100792807.03.2016IN
Title (EN) ASYMMETRIC PHONONIC CRYSTAL (PNC) TETHERING FOR RADIO FREQUENCY (RF) MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) RESONATOR
(FR) ATTACHE ASYMÉTRIQUE DE CRISTAUX PHONONIQUES (PNC) POUR UN RÉSONATEUR DE SYSTÈME MICRO-ÉLECTROMÉCANIQUE (MEMS) À RADIOFRÉQUENCE (RF)
Abstract:
(EN) Embodiments herein provide an asymmetric phononic crystal (PnC) tethering for RF MEMS resonators. The tethering includes a plurality of asymmetric unit cells. Further, each asymmetric unit cell includes two semicircular inclusions with their centers displaced from each other by twice the value of distance between each inclusion.
(FR) Selon certains modes de réalisation, l'invention concerne une attache asymétrique de cristaux phononiques (PnC) pour des résonateurs MEMS RF. L'attache comprend une pluralité de cellules unitaires asymétriques. De plus, chaque cellule unitaire asymétrique comprend deux inclusions semi-circulaires dont les centres sont déplacés l'un par rapport à l'autre de deux fois la valeur de la distance entre chaque inclusion.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)