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1. (WO2017153927) INDIRECT BAND GAP LIGHT EMITTING DEVICE
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Pub. No.: WO/2017/153927 International Application No.: PCT/IB2017/051352
Publication Date: 14.09.2017 International Filing Date: 08.03.2017
Chapter 2 Demand Filed: 14.12.2017
IPC:
F21V 9/16 (2006.01) ,H01L 33/00 (2010.01) ,H05B 37/02 (2006.01)
F MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21
LIGHTING
V
FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
9
Light filters; Selection of luminescent materials for light screens
16
Selection of luminescent materials for light screens
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
37
Circuit arrangements for electric light sources in general
02
Controlling
Applicants:
INSIAVA (PTY) LTD. [ZA/ZA]; Enterprise Building 140 Lunnon Road Hillcrest 0083 Pretoria, ZA
Inventors:
VENTER, Petrus, Johannes; ZA
GOOSEN, Marius, Eugene; ZA
JANSE VAN RENSBURG, Christo; ZA
FAURÉ, Nicolaas, Mattheus; ZA
Agent:
DAVIES, James, Hasely; ZA
Priority Data:
2016/0159308.03.2016ZA
Title (EN) INDIRECT BAND GAP LIGHT EMITTING DEVICE
(FR) DISPOSITIF ÉMETTEUR DE LUMIÈRE À BANDE INTERDITE INDIRECTE
Abstract:
(EN) An indirect band gap light emitting device comprises a first body of non-monocrystalline indirect band gap semiconductor material. In this first body, two regions are formed: a first region with a first doping kind and a first doping concentration and a second region with a second doping kind and a second doping concentration. A junction is formed between the first region and the second region with a terminal arrangement connected to the first body and arranged to reverse bias the junction so as to emit light. The first body is formed from a deposited layer of semiconductor to form an integral part of a substrate. An integrated circuit can include the light emitting device and a second body of monocrystalline indirect band gap semiconductor material. A third body may separate and galvanically isolate the first and second bodies from each other.
(FR) L'invention concerne un dispositif émetteur de lumière à bande interdite indirecte comprenant un premier corps de matériau semi-conducteur à bande interdite indirecte non monocristallin. Dans ce premier corps, deux régions sont formées : une première région présentant un premier type de dopage et une première concentration de dopage et une seconde région présentant un second type de dopage et une seconde concentration de dopage. Une jonction est formée entre la première région et la seconde région avec un agencement de borne connecté au premier corps et agencé pour inverser la polarisation de la jonction de manière à émettre de la lumière. Le premier corps est formé à partir d'une couche de semi-conducteur déposée pour former une partie intégrante d'un substrat. Un circuit intégré peut comprendre le dispositif émetteur de lumière et un second corps de matériau semi-conducteur à bande interdite indirecte monocristallin. Un troisième corps peut séparer et réaliser l'isolation galvanique des premier et second corps l'un de l'autre.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)