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1. (WO2017153604) CAM MEMORY CELL
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Pub. No.: WO/2017/153604 International Application No.: PCT/EP2017/055812
Publication Date: 14.09.2017 International Filing Date: 13.03.2017
IPC:
G11C 11/412 (2006.01) ,G11C 13/02 (2006.01) ,G11C 15/04 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
41
forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
412
using field-effect transistors only
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
02
using elements whose operation depends upon chemical change
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
15
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
04
using semiconductor elements
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; Bat le Ponant 25 rue Leblanc 75015 Paris, FR
Inventors:
MAKOSIEJ, Adam; FR
AMARA, Amara; FR
ANGHEL, Costin; FR
GUPTA, Navneet; FR
Agent:
BREVALEX; 95, rue d'Amsterdam 75378 Paris Cedex 8, FR
Priority Data:
165205411.03.2016FR
165964906.10.2016FR
Title (EN) CAM MEMORY CELL
(FR) CELLULE MEMOIRE CAM
Abstract:
(EN) CAM memory cell (100) comprising: a latch (103) comprising N first TFETs (102) that are connected in series between two supply potentials so that each source and drain of the first TFETs is connected either to one of the potentials or to the source or to the drain of another first TFET, one of the potentials being applied to the gate of each first TFET having a reverse bias VDS and a forward bias VGS; an output block (106) connected to N-1 storage nodes (104) that are formed at the points of connection between the first TFETs, and which is capable of reading a datum stored in the storage nodes and/or of delivering, as output, a value representative of a match or a non-match between a search datum and the stored datum; a write block (110) capable of applying a datum to be stored in the storage nodes.
(FR) Cellule mémoire CAM (100) comprenant: un verrou (103) comprenant N premiers TFET (102) connectés en série entre deux potentiels d'alimentation pour que chaque source et drain des premiers TFET soit connecté soit à l'un des potentiels soit à la source ou au drain d'un autre premier TFET, l'un des potentiels étant appliqué sur la grille de chaque premier TFET ayant une VDS de polarisation inverse et une VGS de polarisation directe; un bloc de sortie (106) connecté à N-1 nœuds de stockage (104) formés au niveau de points de connexion entre les premiers TFET, et apte à lire une donnée stockée dans les nœuds de stockage et/ou de fournir en sortie une valeur représentative d'une concordance ou d'une discordance entre une donnée de recherche et la donnée stockée; un bloc d'écriture (110) apte à appliquer une donnée à stocker dans les nœuds de stockage.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)