Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017152644) THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/152644 International Application No.: PCT/CN2016/105065
Publication Date: 14.09.2017 International Filing Date: 08.11.2016
IPC:
H01L 29/786 (2006.01) ,H01L 21/336 (2006.01) ,H01L 27/12 (2006.01) ,G02F 1/1368 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
Applicants:
BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District, Beijing 100015, CN
Inventors:
LIU, Zheng; CN
LI, Xiaolong; CN
HUANG FU, Lujiang; CN
Agent:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS; Chen, Yuan 10th Floor, Tower D, Minsheng Financial Center, 28 Jianguomennei Avenue, Dongcheng District Beijing 100005, CN
Priority Data:
201610140453.311.03.2016CN
Title (EN) THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE
(FR) TRANSISTOR EN COUCHES MINCES, SON PROCÉDÉ DE FABRICATION, SUBSTRAT DE RÉSEAU ET DISPOSITIF D’AFFICHAGE
Abstract:
(EN) A thin film transistor and a fabricating method thereof as well as an array substrate and a display device are provided. The thin film transistor (1) includes a substrate (10), a source electrode (15) and a drain electrode (16) on the substrate (10), an active layer (11) on the source and drain electrodes, a gate insulating layer (12) on the active layer (11), and a gate electrode (13) on the gate insulating layer (12). The active layer (11) extends from the source electrode (15) towards the drain electrode (16) along a non-linear path.
(FR) L’invention concerne un transistor en couches minces et son procédé de fabrication, ainsi qu’un substrat de réseau et un dispositif d’affichage. Le transistor en couches minces (1) comprend un substrat (10), une électrode de source (15) et une électrode de drain (16) sur le substrat (10), une couche active (11) sur les électrodes de source et de drain, une couche d’isolation de grille (12) sur la couche active (11), et une électrode de grille (13) sur la couche d’isolation de grille (12). La couche active (11) s’étend à partir de l’électrode de source (15) vers l’électrode de drain (16) selon un trajet non linéaire.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)