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|1. (WO2017152620) METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE|
|Title:||METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE|
Provided are a method for growing gallium nitride based on graphene and magnetron sputtered aluminium nitride, and a gallium nitride thin film. An embodiment of the present invention comprises: covering a substrate with graphene; magnetron sputtering aluminium nitrite onto graphene-covered substrate to obtain a sputtered aluminium nitrite substrate; placing the sputtered aluminium nitride substrate into a MOCVD reaction chamber and implementing thermal treatment to obtain a thermally treated substrate; and respectively growing on the thermally treated substrate an aluminium nitride transition layer and a first gallium nitride layer and a second gallium nitride layer having different V-III ratios. The present gallium nitrate thin film embodiment comprises the following structures from bottom to top: a substrate (1), a graphene layer (2), an aluminium nitride nucleation layer (3) produced by means of a magnetron sputtering method, an aluminium nitride transition layer (4) grown by MOCVD, and a first gallium nitrate layer and a second gallium nitrate layer (5, 6) having different V-III ratios.