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1. (WO2017152620) METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE

Pub. No.:    WO/2017/152620    International Application No.:    PCT/CN2016/100539
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Thu Sep 29 01:59:59 CEST 2016
IPC: H01L 33/00
H01L 33/04
Applicants: XIDIAN UNIVERSITY
西安电子科技大学
Inventors: ZHANG, Jincheng
张进成
NING, Jing
宁静
WANG, Dong
王东
CHEN, Zhibin
陈智斌
LIN, Zhiyu
林志宇
HAO, Yue
郝跃
Title: METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
Abstract:
Provided are a method for growing gallium nitride based on graphene and magnetron sputtered aluminium nitride, and a gallium nitride thin film. An embodiment of the present invention comprises: covering a substrate with graphene; magnetron sputtering aluminium nitrite onto graphene-covered substrate to obtain a sputtered aluminium nitrite substrate; placing the sputtered aluminium nitride substrate into a MOCVD reaction chamber and implementing thermal treatment to obtain a thermally treated substrate; and respectively growing on the thermally treated substrate an aluminium nitride transition layer and a first gallium nitride layer and a second gallium nitride layer having different V-III ratios. The present gallium nitrate thin film embodiment comprises the following structures from bottom to top: a substrate (1), a graphene layer (2), an aluminium nitride nucleation layer (3) produced by means of a magnetron sputtering method, an aluminium nitride transition layer (4) grown by MOCVD, and a first gallium nitrate layer and a second gallium nitrate layer (5, 6) having different V-III ratios.