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1. (WO2017152488) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2017/152488    International Application No.:    PCT/CN2016/081784
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Fri May 13 01:59:59 CEST 2016
IPC: H01L 29/786
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD.
深圳市华星光电技术有限公司
Inventors: LI, Jinming
李金明
Title: THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Abstract:
A thin film transistor and a manufacturing method therefor. The transistor comprises: a substrate (1); a gate electrode (2) formed on the substrate; a gate insulation layer (3) formed on the gate electrode; a semiconductor layer (4) formed on the gate insulation layer and corresponding to the gate electrode; a pixel electrode (5) arranged on the same layer as the semiconductor layer; an ohmic contact layer (9) formed on the same layer as the semiconductor layer and formed on the same layer as the pixel electrode; and a source electrode (6) and a drain electrode (7) arranged above the ohmic contact layer. A semiconductor layer and a pixel electrode are formed on the same layer, so that the semiconductor layer and the pixel electrode can be manufactured by using only one mask, thereby reducing the number of masks and simplifying the process.