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1. (WO2017152450) FFS MODE ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/152450 International Application No.: PCT/CN2016/078754
Publication Date: 14.09.2017 International Filing Date: 08.04.2016
IPC:
G02F 1/1343 (2006.01) ,G02F 1/1362 (2006.01) ,H01L 21/77 (2017.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1343
Electrodes
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号丁珂 Ding Ke No.9-2 Tangming Rd, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
葛世民 GE, Shimin; CN
Agent:
深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY; 中国广东省深圳市 福田区深南大道6021号喜年中心A座1709-1711 Hailrun Complex Block A Room 1709-1711 No.6021 Shennan Blvd,Futian District ShenZhen, Guangdong 518040, CN
Priority Data:
201610141051.511.03.2016CN
Title (EN) FFS MODE ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR
(FR) SUBSTRAT DE MATRICE EN MODE FFS ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(ZH) FFS模式的阵列基板及制作方法
Abstract:
(EN) An FFS mode array substrate and manufacturing method therefor. The FFS mode array substrate comprises: a glass substrate (11) on which a gate (13) is provided; a first insulating layer (14); a semiconductor layer (1315) comprising a channel region (1A) and a common electrode region (1B), a channel semiconductor layer (13) being formed in the channel region (1A) of the semiconductor layer (1315), a common electrode layer (15) being formed in the common electrode region (1B) of the semiconductor layer (1315) by means of semiconductor doping; and a second insulating layer (20) on which a first through hole (20a) and a second through hole (20b) are formed.
(FR) La présente invention concerne un substrat de matrice en mode FFS et un procédé de fabrication associé. Le substrat de matrice en mode FFS comprend : un substrat de verre (11) sur lequel une grille (13) est disposée ; une première couche isolante (14) ; une couche semi-conductrice (1315) comportant une région de canal (1A) et une région d'électrode commune (1B), une couche semi-conductrice de canal (13) étant formée dans la région de canal (1A) de la couche semi-conductrice (1315), une couche d'électrode commune (15) étant formée dans la région d'électrode commune (1B) de ladite couche semi-conductrice (1315) au moyen d'un dopage de semi-conducteur ; ainsi qu'une seconde couche isolante (20) dans laquelle un premier trou débouchant (20a) et un second trou débouchant (20b) sont pratiqués.
(ZH) 一种FFS模式的阵列基板及制作方法,该FFS模式的阵列基板包括玻璃基板(11),栅极(13)设置于该玻璃基板(11)上;第一绝缘层(14);半导体层(1315),半导体层(1315)包括沟道区域(1A)以及公共电极区域(1B),在半导体层(1315)的沟道区域(1A)形成沟道半导体层(13),在半导体层(1315)的公共电极区域(1B)的半导体掺杂形成公共电极层(15);第二绝缘层(20),该第二绝缘层(20)上形成有第一过孔(20a)及第二过孔(20b)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)