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1. (WO2017152445) THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2017/152445    International Application No.:    PCT/CN2016/078373
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Sat Apr 02 01:59:59 CEST 2016
IPC: H01L 21/336
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: LV, Xiaowen
吕晓文
Title: THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREFOR
Abstract:
A thin film transistor array panel and a manufacturing method therefor. A polysilicon layer (103) comprises first, second and third regions (106, 107, 108); the second region (107) comprises fourth, fifth and sixth regions (1073, 1072, 1071); the third region (108) comprises seventh, eighth and ninth regions (1081, 1082, 1083); the sixth, fourth, ninth and seventh regions (1071, 1073, 1083, 1081) are respectively doped with first, second, third and fourth ions; and a gate electrode (105), a source electrode (501) and a drain electrode (502) respectively correspond to the first, sixth and ninth regions (106, 1071, 1083). The thin film transistor array panel can reduce the leakage current of a thin film transistor.