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1. (WO2017152443) SEMICONDUCTOR CELL STRUCTURE AND POWER SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/152443    International Application No.:    PCT/CN2016/078270
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Sat Apr 02 01:59:59 CEST 2016
IPC: H01L 29/861
H01L 29/40
H01L 29/78
Applicants: NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
中国电子科技集团公司第二十四研究所
Inventors: TAN, Kaizhou
谭开洲
HU, Gangyi
胡刚毅
TANG, Zhaohuan
唐昭焕
WANG, Jian'an
王健安
YANG, Yonghui
杨永晖
ZHONG, Yi
钟怡
CAO, Yang
曹阳
LIU, Yong
刘勇
ZHU, Kunfeng
朱坤峰
Title: SEMICONDUCTOR CELL STRUCTURE AND POWER SEMICONDUCTOR DEVICE
Abstract:
A semiconductor cell structure and a power semiconductor device. The semiconductor cell structure comprises: a highly-doped semiconductor material region (101), an epitaxial layer (102), a dielectric insulating layer (103), a semi-insulating material (104), an active device region (105), and a top electrode of a semi-insulating layer (106), a deep groove (109) being further etched on the epitaxial layer (102), the deep groove (109) vertically extending into the highly-doped semiconductor material region (101), the dielectric insulating layer (103) being formed on the side wall inside the deep groove (109), and the deep groove (109) being filled with the semi-insulating material (104). Applying the cell structure to the power semiconductor device can reduce the process implementation difficulty, relax the harsh requirements on charge balance, broaden the tolerant charge mismatch percentage by approximately ten times, and increase the reliability of the normal operation of the cell.