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1. (WO2017152442) THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY PANEL, AND METHOD FOR PREPARING THIN FILM TRANSISTOR

Pub. No.:    WO/2017/152442    International Application No.:    PCT/CN2016/077952
Publication Date: Fri Sep 15 01:59:59 CEST 2017 International Filing Date: Fri Apr 01 01:59:59 CEST 2016
IPC: H01L 29/423
G02F 1/1362
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: HU, Xiaobo
胡小波
Title: THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY PANEL, AND METHOD FOR PREPARING THIN FILM TRANSISTOR
Abstract:
A thin film transistor (10), a liquid crystal display panel, and a method for preparing the thin film transistor (10). The thin film transistor (10) comprises a substrate (110) and a gate (120), a gate insulating layer (130), a source (140), a drain (150), a channel layer (160), first and second ohmic contact layers (170a, 170b), a passivation layer (180), and a pixel electrode (190) that are disposed on the same side of the substrate (110). The gate (120) is disposed on the surface of the substrate (110). The gate insulating layer (130) covers the gate (120). The source (140), the drain (150), the channel layer (160), and the first and second ohmic contact layers (170a, 170b) are disposed on the gate insulating layer (130). The source (140) and the drain (150) are spaced apart. The channel layer (160) is disposed between the source (140) and the drain (150) and is disposed corresponding to the gate (120). The first ohmic contact layer (170a) is disposed between the source (140) and the channel layer (160). The two opposite ends of the first ohmic contact layer (170a) are respectively in contact with the source (140) and the channel layer (160). The second ohmic contact layer (170b) is disposed between the drain (150) and the channel layer (160). The two opposite ends of the second ohmic contact layer (170b) are respectively in contact with the drain (150) and the channel layer (160). The first ohmic contact layer (170a), the second ohmic contact layer (170b), and the channel layer (160) are located at the same layer, wherein the channel layer (160) is a metal oxide layer.