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1. (WO2017151846) HIGH-SPEED VCSEL DEVICE
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Pub. No.: WO/2017/151846 International Application No.: PCT/US2017/020329
Publication Date: 08.09.2017 International Filing Date: 02.03.2017
IPC:
H01S 5/183 (2006.01) ,H04B 10/50 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
10
Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
50
Transmitters
Applicants:
PRINCETON OPTRONICS, INC. [US/US]; 1 Electronics Drive Mercerville, New Jersey 08619, US
Inventors:
GHOSH, Chuni; US
SEURIN, Jean-Francois; US
ZHOU, Delai; US
WATKINS, Laurence; US
Agent:
BORODACH, Samuel; US
Priority Data:
62/303,63204.03.2016US
Title (EN) HIGH-SPEED VCSEL DEVICE
(FR) DISPOSITIF DE LASER VCSEL HAUTE VITESSE
Abstract:
(EN) A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.
(FR) La présente invention concerne un laser émettant en surface à cavité verticale (VCSEL pour Vertical Cavity Surface Emitting Laser) qui comprend une surface réfléchissante du laser VCSEL. Une région de gain est positionnée sur le réflecteur de Bragg réparti qui génère un gain optique. La région de gain comprend un premier et un second empilement de multiples puits quantiques, une jonction tunnel positionnée entre les premier et second empilements de multiples puits quantiques, et une ouverture de courant placée sur l'un des premier et second empilements de multiples puits quantiques. L'ouverture de courant confine une circulation de courant dans la région de gain. Une surface partiellement réfléchissante et la surface réfléchissante forment une cavité résonante de laser VCSEL, dans laquelle un faisceau optique de sortie se propage depuis la surface partiellement réfléchissante.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)