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1. (WO2017151803) GROUND REFERENCE SCHEME FOR A MEMORY CELL

Pub. No.:    WO/2017/151803    International Application No.:    PCT/US2017/020251
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Thu Mar 02 00:59:59 CET 2017
IPC: G11C 11/22
Applicants: MICRON TECHNOLOGY, INC.
Inventors: VIMERCATI, Daniele
DERNER, Scott, James
DI VINCENZO, Umberto
KAWAMURA, Christopher, John
CARMAN, Eric, S.
Title: GROUND REFERENCE SCHEME FOR A MEMORY CELL
Abstract:
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A ground reference scheme may be employed in a digit line voltage sensing operation. A positive voltage may be applied to a memory cell; and after a voltage of the digit line of the cell has reached a threshold, a negative voltage may be applied to cause the digit line voltages to center around ground before a read operation. In another example, a first voltage may be applied to a memory cell and then a second voltage that is equal to an inverse of the first voltage may be applied to a reference capacitor that is in electronic communication with a digit line of the memory cell to cause the digit line voltages to center around ground before a read operation.