Search International and National Patent Collections
|1. (WO2017151296) MULTI-STEP VOLTAGE FOR FORMING RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELL FILAMENT|
|Applicants:||SILICON STORAGE TECHNOLOGY, INC.
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
TRAN, Hieu, Van
NGUYEN, Hung, Quoc
|Title:||MULTI-STEP VOLTAGE FOR FORMING RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELL FILAMENT|
A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.