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1. (WO2017151254) HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS

Pub. No.:    WO/2017/151254    International Application No.:    PCT/US2017/015479
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Sat Jan 28 00:59:59 CET 2017
IPC: H01L 21/78
H01L 21/76
H01L 21/268
H01L 21/768
H01L 21/3065
H01L 21/3213
Applicants: APPLIED MATERIALS, INC.
Inventors: PARK, Jungrae
LEI, Wei-Sheng
EATON, Brad
PAPANU, James S.
KUMAR, Ajay
Title: HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS
Abstract:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.