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|1. (WO2017151254) HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS|
|Applicants:||APPLIED MATERIALS, INC.
PAPANU, James S.
|Title:||HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS|
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.