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1. (WO2017150932) THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/150932 International Application No.: PCT/KR2017/002312
Publication Date: 08.09.2017 International Filing Date: 03.03.2017
IPC:
H01L 35/32 (2006.01) ,H01L 35/30 (2006.01) ,H01L 35/04 (2006.01) ,H01L 35/12 (2006.01) ,H01L 35/24 (2006.01) ,H01L 35/34 (2006.01) ,H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28
operating with Peltier or Seebeck effect only
32
characterised by the structure or configuration of the cell or thermo-couple forming the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28
operating with Peltier or Seebeck effect only
30
characterised by the heat-exchanging means at the junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
04
Structural details of the junction; Connections of leads
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
24
using organic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR/KR]; 서울시 중구 후암로 98 LG서울역빌딩 17층 17th Floor, LG Seoulsationbuilding 98 Huam-ro, Jung-gu Seoul 04637, KR
Inventors:
김태희 KIM, Tae Hee; KR
Agent:
특허법인 다나 DANA PATENT LAW FIRM; 서울시 강남구 역삼로3길 11 광성빌딩 신관4~6층 4~6th Floor, New Wing, Gwangsung Bldg. 11, Yeoksam-ro 3-gil Gangnam-gu Seoul 06242, KR
Priority Data:
10-2016-002659304.03.2016KR
Title (EN) THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF THERMOÉLECTRIQUE ET PROCÉDÉ DE FABRICATION DE CE DISPOSITIF
(KO) 열전 소자 및 이의 제조방법
Abstract:
(EN) According to one embodiment of the present invention, a thermoelectric device and a manufacturing method therefor are disclosed. The thermoelectric device comprises: a plurality of upper electrodes and a plurality of lower electrodes; and N-type thermoelectric materials and P-type thermoelectric materials arranged alternately between the upper electrodes and the lower electrodes, slantly disposed on the lower electrodes, and electrically connected.
(FR) Selon un mode de réalisation, la présente invention concerne un dispositif thermoélectrique et un procédé de fabrication de ce dispositif. Ce dispositif thermoélectrique comprend : une pluralité d'électrodes supérieures et une pluralité d'électrodes inférieures ; ainsi que des matériaux thermoélectriques de type N et des matériaux thermoélectriques de type P agencés en alternance entre les électrodes supérieures et les électrodes inférieures, disposés de manière inclinée sur les électrodes inférieures, et connectés électriquement.
(KO) 본 발명의 일실시예에 따른 열전 소자 및 이의 제조방법이 개시된다. 상기 열전 소자는 복수의 상부 전극과 복수의 하부 전극 및 상기 상부 전극과 상기 하부 전극 사이에 교대로 배열되고, 상기 하부 전극 상에 경사지게 배치되며 전기적으로 연결된 N형 열전소재와 P형 열전소재를 포함한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)