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1. (WO2017150671) PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT

Pub. No.:    WO/2017/150671    International Application No.:    PCT/JP2017/008287
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Fri Mar 03 00:59:59 CET 2017
IPC: H01L 31/0747
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: ISHII, Masahito
石井 真人
KOBAYASHI, Masamichi
小林 正道
ZENITANI, Yoshitaka
銭谷 嘉高
MORI, Takeshi
森 健史
OKAMOTO, Chikao
岡本 親扶
Title: PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
Abstract:
This photoelectric conversion element is provided with an amorphous semiconductor film (3, 5) of a first conductivity type and an amorphous semiconductor film (3, 5) of a second conductivity type on a first surface (1b) side of a semiconductor substrate (1). A first electrode (7, 8) is provided on the amorphous semiconductor film (3, 5) of a first conductivity type. The amorphous semiconductor film (3, 5) of a first conductivity type has a thinned region (12, 14) which is a surface region of a portion of the amorphous semiconductor film (3, 5) of a first conductivity type, where the thickness of the amorphous semiconductor film (3, 5) of a first conductivity type is partially reduced. The first electrode (7, 8) is arranged in a part of the thinned region (12, 14).