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1. (WO2017150628) MICROSCOPIC THREE-DIMENSIONAL STRUCTURE FORMING METHOD, AND MICROSCOPIC THREE-DIMENSIONAL STRUCTURE
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Pub. No.: WO/2017/150628 International Application No.: PCT/JP2017/008171
Publication Date: 08.09.2017 International Filing Date: 01.03.2017
IPC:
H01L 21/3065 (2006.01) ,G03F 7/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 東京都千代田区霞が関1丁目3番1号 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
Inventors:
田中 宏幸 TANAKA Hiroyuki; JP
来見田 淳也 KURUMIDA Junya; JP
クンプアン ソマワン Khumpuang Sommawan; JP
原 史朗 HARA Shiro; JP
Agent:
山田 泰之 YAMADA Yasuyuki; JP
長谷部 善太郎 HASEBE Zentaro; JP
中村 理弘 NAKAMURA Masahiro; JP
Priority Data:
2016-03959002.03.2016JP
Title (EN) MICROSCOPIC THREE-DIMENSIONAL STRUCTURE FORMING METHOD, AND MICROSCOPIC THREE-DIMENSIONAL STRUCTURE
(FR) PROCÉDÉ DE FORMATION DE STRUCTURE TRIDIMENSIONNELLE MICROSCOPIQUE ET STRUCTURE TRIDIMENSIONNELLE MICROSCOPIQUE
(JA) 微細立体構造形成方法、及び微細立体構造
Abstract:
(EN) The present invention addresses the problem of forming, rapidly and faithfully to a design, a microscopic three-dimensional structure carved in a vertical direction and having smooth side surfaces at low cost. As a solution, a microscopic three-dimensional structure forming method is provided, comprising: the step (1) of forming a resist pattern drawn on a substrate by mask-less exposure; an isotropic etching step (2A) of forming a recess in the substrate by isotropic etching; a plasma deposition step (2B) of depositing a protective film on the resist pattern and the inner walls of the recess; a removal step (2C) of removing the protective film on the bottom surface of the recess by anisotropic etching; and the step (2) of sequentially reiterating the isotropic etching step (2A), the plasma deposition step (2B) and the removal step (2C), thereby forming a microscopic depression in the substrate.
(FR) La présente invention traite le problème de la formation, rapide et fidèle à une conception, d'une structure tridimensionnelle microscopique creusée dans une direction verticale et comportant des surfaces latérales lisses à faible coût. Comme solution, la présente invention propose un procédé de formation de structure tridimensionnelle microscopique comprenant : l'étape (1) consistant à former un motif de réserve dessiné sur un substrat par exposition sans masque; une étape de gravure isotrope (2A) consistant à former un évidement dans le substrat par gravure isotrope; une étape de dépôt de plasma (2B) consistant à déposer un film de protection sur le motif de réserve et les parois internes de l'évidement; une étape de retrait (2C) consistant à retirer le film de protection sur la surface inférieure de l'évidement par gravure anisotrope; et l'étape (2) consistant à réitérer de façon séquentielle l'étape de gravure isotrope (2A), l'étape de dépôt de plasma (2B) et l'étape de retrait (2C), ce qui permet de former un creux microscopique dans le substrat.
(JA) 垂直方向に掘られた滑らかな側面を有する微細立体構造を、安価で迅速に、かつ設計に忠実に形成することを課題とする。解決手段として、基板上にマスクレス露光により描画されたレジストパターンを形成する工程(1)と、等方性エッチングにより前記基板に窪みを形成する等方性エッチング工程(2A)と、前記窪みの内壁と前記レジストパターンとに保護膜を堆積するプラズマデポジション工程(2B)と、異方性エッチングにより、前記窪みの底面の保護膜を除去する除去工程(2C)と、等方性エッチング工程(2A)とプラズマデポジション工程(2B)と除去工程(2C)とを順に繰り返すことで前記基板に微細凹部を形成する工程(2)と、を有する微細立体構造形成方法を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)