Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017150540) IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/150540 International Application No.: PCT/JP2017/007819
Publication Date: 08.09.2017 International Filing Date: 28.02.2017
IPC:
H01L 51/44 (2006.01) ,H01L 27/30 (2006.01) ,H01L 51/42 (2006.01) ,H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30
with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
SONY CORPORATION [JP/JP]; 1-7-1, Konan, Minato-ku, Tokyo 1080075, JP
Inventors:
TOGASHI Hideaki; JP
KOGA Fumihiko; JP
YAMAGUCHI Tetsuji; JP
HIRATA Shintarou; JP
WATANABE Taiichiro; JP
ANDO Yoshihiro; JP
KATAOKA Toyotaka; JP
KEINO Satoshi; JP
KANEDA Yukio; JP
Agent:
YAMAMOTO Takahisa; JP
YOSHII Masaaki; JP
Priority Data:
2016-03877701.03.2016JP
2016-19391930.09.2016JP
Title (EN) IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE
(FR) ÉLÉMENT D'IMAGERIE, ÉLÉMENT D'IMAGERIE DE TYPE EMPILÉ, DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS ET PROCÉDÉ DE COMMANDE POUR UN DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS
Abstract:
(EN) An imaging device is provided. The imaging device may include a substrate (70) having a first photoelectric conversion unit (41 or 43) and a second photoelectric conversion unit (11, 15, 16) at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer (15), a first electrode (11), a second electrode (16) above the photoelectric conversion layer, a third electrode (12), and an insulating material (82F) between the third electrode (12) and the photoelectric conversion layer (15), wherein a portion of the insulating material (82E) is between the first electrode (11) and the third electrode (12).
(FR) La présente invention concerne un dispositif d'imagerie. Le dispositif d'imagerie peut comprendre un substrat (70) ayant une première unité de conversion photoélectrique (41 ou 43) et une seconde unité de conversion photoélectrique (11, 15, 16) au niveau d'un côté d'incidence de lumière du substrat. La seconde unité de conversion photoélectrique peut comprendre une couche de conversion photoélectrique (15), une première électrode (11), une deuxième électrode (16) au-dessus de la couche de conversion photoélectrique, une troisième électrode (12) et un matériau isolant (82F) entre la troisième électrode (12) et la couche de conversion photoélectrique (15), une partie du matériau isolant (82E) se trouvant entre la première électrode (11) et la troisième électrode (12).
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)