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1. (WO2017150502) THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL
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Pub. No.: WO/2017/150502 International Application No.: PCT/JP2017/007681
Publication Date: 08.09.2017 International Filing Date: 28.02.2017
IPC:
G09F 9/30 (2006.01) ,G02F 1/1368 (2006.01) ,H01L 21/336 (2006.01) ,H01L 29/786 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/02 (2006.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
岡田 訓明 OKADA Kuniaki; --
内田 誠一 UCHIDA Seiichi; --
上田 直樹 UEDA Naoki; --
佐々木 貴啓 SASAKI Takahiro; --
Agent:
特許業務法人暁合同特許事務所 AKATSUKI UNION PATENT FIRM; 愛知県名古屋市中区栄二丁目1番1号 日土地名古屋ビル5階 5th Floor, Nittochi Nagoya Bldg., 1-1, Sakae 2-chome, Naka-ku, Nagoya-shi, Aichi 4600008, JP
Priority Data:
2016-04196704.03.2016JP
Title (EN) THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL
(FR) SUBSTRAT DE TRANSISTOR À COUCHE MINCE ET PANNEAU D’AFFICHAGE
(JA) 薄膜トランジスタ基板及び表示パネル
Abstract:
(EN) An array substrate (thin film transistor substrate) (11b) is provided with: source wiring (wiring) (20); a TFT (thin film transistor) (17) having a plurality of electrodes (17a, 17b, 17c); and a wiring connection part (31) wherein at least a part forms any of the plurality of electrodes (17a, 17b, 17c), that connects to the source wiring (20), and that comprises a translucent dielectric material.
(FR) Un substrat de réseau (substrat de transistor à couche mince) (11b) comporte : un câblage de source (câblage) (20); un TFT (transistor à couche mince) (17) ayant une pluralité d'électrodes (17a, 17b, 17c); et une partie de connexion de câblage (31), au moins une partie formant l'une quelconque de la pluralité d'électrodes (17a. 17b 17c), qui est connectée au câblage de source (20), et qui comprend un matériau diélectrique translucide.
(JA) アレイ基板(薄膜トランジスタ基板)(11b)は、ソース配線(配線)(20)と、複数の電極(17a,17b,17c)を有するTFT(薄膜トランジスタ)(17)と、少なくとも一部が複数の電極(17a,17b,17c)のいずれかを構成し、ソース配線(20)に接続され、透光性導電材料からなる配線接続部(31)と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)