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1. (WO2017150400) FILM DEPOSITION DEVICE
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Pub. No.: WO/2017/150400 International Application No.: PCT/JP2017/007292
Publication Date: 08.09.2017 International Filing Date: 27.02.2017
IPC:
H01L 21/205 (2006.01) ,C23C 16/455 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Applicants:
株式会社ニューフレアテクノロジー NUFLARE TECHNOLOGY, INC. [JP/JP]; 神奈川県横浜市磯子区新杉田町8番1 8-1, Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa 2358522, JP
昭和電工株式会社 SHOWA DENKO K.K. [JP/JP]; 東京都港区芝大門1丁目13番9号 13-9, Shiba Daimon 1-chome, Minato-ku, Tokyo 1058518, JP
一般財団法人 電力中央研究所 CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY [JP/JP]; 東京都千代田区大手町1丁目6番1号 1-6-1 Otemachi, Chiyoda-ku, Tokyo 1008126, JP
Inventors:
鈴木 邦彦 SUZUKI Kunihiko; JP
池谷 尚久 IKEYA Naohisa; JP
深田 啓介 FUKADA Keisuke; JP
伊藤 雅彦 ITO Masahiko; JP
鎌田 功穂 KAMATA Isaho; JP
土田 秀一 TSUCHIDA Hidekazu; JP
藤林 裕明 FUJIBAYASHI Hiroaki; JP
上東 秀幸 UEHIGASHI Hideyuki; JP
内藤 正美 NAITO Masami; JP
原 一都 HARA Kazukuni; JP
青木 宏文 AOKI Hirofumi; JP
小澤 隆弘 KOZAWA Takahiro; JP
Agent:
永井 浩之 NAGAI Hiroshi; JP
中村 行孝 NAKAMURA Yukitaka; JP
佐藤 泰和 SATO Yasukazu; JP
朝倉 悟 ASAKURA Satoru; JP
関根 毅 SEKINE Takeshi; JP
赤岡 明 AKAOKA Akira; JP
鈴木 健之 SUZUKI Kenshi; JP
Priority Data:
2016-03927001.03.2016JP
Title (EN) FILM DEPOSITION DEVICE
(FR) DISPOSITIF DE DÉPÔT DE FILM
(JA) 成膜装置
Abstract:
(EN) [Problem] To provide a film deposition device that can inhibit the infiltration of a gas, suppress the generation of particles resulting from the adhesion of deposited matter, and prevent the generation of crystal defects in the film that is formed. [Solution] A feeding unit 4 is provided with: a first partition 32; a second partition 401 that is disposed at a predetermined interval below the first partition; a third partition 402 that is disposed at a predetermined interval below the second partition; a first passage 431 into which a first gas is introduced, said first passage being disposed between the first partition and the second partition; a second passage 432 into which a second gas is introduced, said second passage being disposed between the second partition and the third partition; a first pipe 411 that communicates with the first passage from the second partition to below the third partition; a second pipe 421 that communicates with the second passage from the third partition to below the third partition, said second pipe being disposed so as to enclose the first pipe; and a protruding part that protrudes from an outer peripheral face 411c of the first pipe to an inner peripheral face 421b of the second pipe, or vice versa, said protruding part being disposed on the outer peripheral face of the first pipe or the inner peripheral face of the second pipe.
(FR) Le problème décrit par l'invention est de pourvoir à un dispositif de dépôt de film qui puisse empêcher l'infiltration d'un gaz, supprimer la génération de particules résultant de l'adhérence de matière déposée, et empêcher la génération de défauts cristallins dans le film qui est formé. La solution de l'invention porte sur une unité d'alimentation (4) comprenant : une première cloison (32) ; une deuxième cloison (401) qui est disposée un intervalle prédéterminé au-dessous de la première cloison ; une troisième cloison (402) qui est disposée un intervalle prédéterminé au-dessous de la deuxième cloison ; un premier passage (431) dans lequel un premier gaz est introduit, ledit premier passage étant disposé entre la première cloison et la deuxième cloison ; un deuxième passage (432) dans lequel un deuxième gaz est introduit, ledit deuxième passage étant disposé entre la deuxième cloison et la troisième cloison ; un premier tuyau (411) qui communique avec le premier passage, de la deuxième cloison à au-dessous de la troisième cloison ; un deuxième tuyau (421) qui communique avec le deuxième passage, de la troisième cloison à au-dessous de la troisième cloison, ledit deuxième tuyau étant disposé de façon à entourer le premier tuyau ; et une partie saillante qui fait saillie d'une face périphérique extérieure (411c) du premier tuyau à une face périphérique intérieure (421b) du deuxième tuyau, ou vice versa, ladite partie saillante étant disposée sur la face périphérique extérieure du premier tuyau ou la face périphérique intérieure du deuxième tuyau.
(JA) 【課題】ガスの回り込みを抑え、堆積物の付着に起因するパーティクルの発生を抑制し、形成される膜の結晶欠陥の発生を防止できる成膜装置を提供する。 【解決手段】供給部4は、第1隔壁32と、第1隔壁の下部に所定間隔で設けられる第2隔壁401と、第2隔壁の下部に所定間隔で設けられる第3隔壁402と、第1ガスが導入される第1の隔壁と第2隔壁の間に設けられる第1流路431と、第2ガスが導入される第2隔壁と第3隔壁との間に設けられる第2流路432と、第2隔壁から第3隔壁の下方に至り、第1流路と連通する第1配管411と、第1配管を囲むように設けられ、第3隔壁から第3隔壁の下方に至り、第2流路と連通する第2配管421と、第1配管の外周面411cまたは第2配管の内周面421bに設けられ、第1配管の外周面および第2配管の内周面の一方から他方に向かって突出した凸部と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)