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1. (WO2017150351) OXIDE SEMICONDUCTOR COMPOUND, SEMICONDUCTOR ELEMENT HAVING LAYER OF OXIDE SEMICONDUCTOR COMPOUND, AND LAMINATE
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Pub. No.: WO/2017/150351 International Application No.: PCT/JP2017/006939
Publication Date: 08.09.2017 International Filing Date: 23.02.2017
IPC:
H01L 29/786 (2006.01) ,H01B 1/08 (2006.01) ,H01B 5/14 (2006.01) ,H01L 21/336 (2006.01) ,H01L 51/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
06
mainly consisting of other non-metallic substances
08
oxides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants:
国立大学法人東京工業大学 TOKYO INSTITUTE OF TECHNOLOGY [JP/JP]; 東京都目黒区大岡山2丁目12番1号 2-12-1, Ookayama, Meguro-ku, Tokyo 1528550, JP
AGC株式会社 AGC INC. [JP/JP]; 東京都千代田区丸の内一丁目5番1号 5-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008405, JP
Inventors:
細野 秀雄 HOSONO, Hideo; JP
神谷 利夫 KAMIYA, Toshio; JP
雲見 日出也 KUMOMI, Hideya; JP
金 正煥 KIM, Junghwan; JP
中村 伸宏 NAKAMURA, Nobuhiro; JP
渡邉 暁 WATANABE, Satoru; JP
宮川 直通 MIYAKAWA, Naomichi; JP
Agent:
伊東 忠重 ITOH, Tadashige; JP
伊東 忠彦 ITOH, Tadahiko; JP
Priority Data:
2016-04049802.03.2016JP
Title (EN) OXIDE SEMICONDUCTOR COMPOUND, SEMICONDUCTOR ELEMENT HAVING LAYER OF OXIDE SEMICONDUCTOR COMPOUND, AND LAMINATE
(FR) COMPOSÉ SEMI-CONDUCTEUR À OXYDE, ÉLÉMENT SEMI-CONDUCTEUR COMPORTANT UNE COUCHE DE COMPOSÉ SEMI-CONDUCTEUR À OXYDE, ET STRATIFIÉ
(JA) 酸化物半導体化合物、酸化物半導体化合物の層を備える半導体素子、および積層体
Abstract:
(EN) Provided is an oxide semiconductor compound which comprises gallium and oxygen, has an optical band gap of 3.4 eV or greater, and has n electron Hall mobility of 3 cm2/Vs or higher as obtained by Hall determination at 300 K.
(FR) La présente invention concerne un composé semi-conducteur à oxyde qui comprend du gallium et de l'oxygène, présente une bande interdite optique supérieure ou égale à 3,4 eV, et possède une mobilité de Hall de n électrons supérieure ou égale à 3 cm2/Vs telle qu'obtenue par détermination de Hall à 300 K.
(JA) ガリウムおよび酸素を含み、光学バンドギャップが3.4eV以上であり、300Kにおけるホール(Hall)測定により得られる電子のホール(Hall)移動度が3cm/Vs以上である、酸化物半導体化合物。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)