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1. (WO2017150295) PHOTOELECTRIC CONVERSION DEVICE
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Pub. No.: WO/2017/150295 International Application No.: PCT/JP2017/006549
Publication Date: 08.09.2017 International Filing Date: 22.02.2017
IPC:
H01L 27/146 (2006.01) ,H01L 29/786 (2006.01) ,H01L 31/10 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
伊東 一篤 ITO, Kazuatsu; --
金子 誠二 KANEKO, Seiji; --
神崎 庸輔 KANZAKI, Yohsuke; --
斉藤 貴翁 SAITOH, Takao; --
宮本 忠芳 MIYAMOTO, Tadayoshi; --
Agent:
特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK; 大阪府大阪市北区天神橋2丁目北2番6号 大和南森町ビル Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041, JP
Priority Data:
2016-03779729.02.2016JP
Title (EN) PHOTOELECTRIC CONVERSION DEVICE
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換装置
Abstract:
(EN) To decrease off-leakage current of a photodiode in a photoelectric conversion device. A photoelectric conversion device (100) which is provided with: an oxide semiconductor layer (5) that is formed on a substrate (1); a passivation film (6) and a planarization film (7) that are laminated on the oxide semiconductor layer; and a photodiode (9) that is composed of a lower electrode (91), a photoelectric conversion layer (92) and an upper electrode (93). The lower electrode is connected to a source electrode (4) via a contact hole (21) that is formed in the passivation film and the planarization film; and the photoelectric conversion layer is not present immediately above the contact hole.
(FR) La présente invention vise à diminuer le courant de fuite hors d'une photodiode dans un dispositif de conversion photoélectrique. À cet effet, la présente invention porte sur un dispositif de conversion photoélectrique (100) qui comporte : une couche semi-conductrice d'oxyde (5) formée sur un substrat (1) ; un film de passivation (6) et un film de planarisation (7) qui sont stratifiés sur la couche d'oxyde semi-conducteur ; et une photodiode (9) qui est composée d'une électrode inférieure (91), d'une couche de conversion photoélectrique (92) et d'une électrode supérieure (93). L'électrode inférieure est connectée à une électrode de source (4) par l'intermédiaire d'un trou de contact (21) qui est formé dans le film de passivation et le film de planarisation ; et la couche de conversion photoélectrique n'est pas présente immédiatement au-dessus du trou de contact.
(JA) 光電変換装置においてフォトダイオードのオフリーク電流を低減する。基板(1)上に形成された酸化物半導体層(5)と、酸化物半導体層上に積層されたパッシベーション膜(6)及び平坦化膜(7)と、下部電極(91)、光電変換層(92)、上部電極(93)からなるフォトダイオード(9)と、を備え、パッシベーション膜及び平坦化膜に形成されたコンタクトホール(21)を介して、ソース電極(4)に下部電極が接続され、コンタクトホールの直上には光電変換層がない光電変換装置(100)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)