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1. (WO2017150280) VERTICAL-TYPE ULTRAVIOLET LIGHT-EMITTING DIODE

Pub. No.:    WO/2017/150280    International Application No.:    PCT/JP2017/006398
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Wed Feb 22 00:59:59 CET 2017
IPC: H01L 33/38
H01L 21/205
H01L 33/32
Applicants: STANLEY ELECTRIC CO., LTD.
スタンレー電気株式会社
Inventors: KINOSHITA, Toru
木下 亨
Title: VERTICAL-TYPE ULTRAVIOLET LIGHT-EMITTING DIODE
Abstract:
[Problem] To provide a vertical-type ultraviolet light-emitting diode having a higher luminous efficiency with a lower operating voltage. [Solution] A vertical-type ultraviolet light-emitting diode that: has, in order, on an aluminum polar surface of an n-type AlN single crystal substrate, a layer represented by n-type AlxGa1-xN (where x is a rational number satisfying 0.5≤X≤1.0), an active layer, a layer represented by p-type AlYGa1-YN (where Y is a rational number satisfying 0.5≤Y≤1.0), and a p-type GaN layer; and is provided with a p-electrode formed on the p-type GaN layer, and an n-electrode partially provided on a surface on a side opposite said aluminum polar surface of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing an opening section becomeing at least one light extraction window. The shortest distance between an arbitrary point of a portion where said n-electrode is not provided and the n-electrode is 400 µm or less.