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1. (WO2017150275) THIN FILM TRANSISTOR
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Pub. No.: WO/2017/150275 International Application No.: PCT/JP2017/006373
Publication Date: 08.09.2017 International Filing Date: 21.02.2017
IPC:
H01L 29/786 (2006.01) ,C23C 14/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
神崎 庸輔 KANZAKI Yohsuke; --
斉藤 貴翁 SAITOH Takao; --
金子 誠二 KANEKO Seiji; --
Agent:
特許業務法人暁合同特許事務所 AKATSUKI UNION PATENT FIRM; 愛知県名古屋市中区栄二丁目1番1号 日土地名古屋ビル5階 5th Floor, Nittochi Nagoya Bldg., 1-1, Sakae 2-chome, Naka-ku, Nagoya-shi, Aichi 4600008, JP
Priority Data:
2016-03670729.02.2016JP
Title (EN) THIN FILM TRANSISTOR
(FR) TRANSISTOR À COUCHES MINCES
(JA) 薄膜トランジスタ
Abstract:
(EN) A TFT (thin film transistor) 11 comprises at least the following: a gate electrode 11a; a channel part 11d formed from an oxide semiconductor film 17; a source electrode 11b connected to one end of the channel part 11d; and a drain electrode 11c connected to the other end of the channel part 11d. The oxide semiconductor film 17 is an oxide semiconductor comprising at least gallium and indium, and has an atomic ratio Ga/(Ga + In) within a range of 1/4.2 to 1/3.3.
(FR) La présente invention concerne un transistor à couches minces (11) qui comprend au moins les éléments suivants : une électrode de grille (11a) ; une partie canal (11d) formée à partir d'un film semi-conducteur d'oxyde (17) ; une électrode de source (11b) raccordée à une extrémité de la partie canal (11d) ; et une électrode de drain (11c) raccordée à l'autre extrémité de la partie de canal (11d). Le film semi-conducteur d'oxyde (17) est un semi-conducteur à base d'oxyde comprenant au moins du gallium et de l'indium, et présente un rapport atomique Ga/(Ga + In) se situant dans une plage allant de 1/4,2 à 1/3,3.
(JA) TFT(薄膜トランジスタ)11は、ゲート電極11aと、酸化物半導体膜17からなるチャネル部11dと、チャネル部11dの一端側に接続されるソース電極11bと、チャネル部11dの他端側に接続されるドレイン電極11cと、を少なくとも有しており、酸化物半導体膜17は、少なくともガリウム及びインジウムを含む酸化物半導体であり、原子比Ga/(Ga+In)が1/4.2~1/3.3の範囲とされる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)