Search International and National Patent Collections

1. (WO2017150161) NITRIDE SEMICONDUCTOR TEMPLATE, METHOD FOR MANUFACTURING SAME, AND ULTRAVIOLET LED

Pub. No.:    WO/2017/150161    International Application No.:    PCT/JP2017/005162
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Tue Feb 14 00:59:59 CET 2017
IPC: H01L 33/12
H01L 21/205
H01L 33/32
Applicants: TAMURA CORPORATION
株式会社タムラ製作所
RIKEN
国立研究開発法人理化学研究所
Inventors: MORISHIMA, Yoshikatsu
森島 嘉克
HIRAYAMA, Hideki
平山 秀樹
Title: NITRIDE SEMICONDUCTOR TEMPLATE, METHOD FOR MANUFACTURING SAME, AND ULTRAVIOLET LED
Abstract:
[Problem] To provide a nitride semiconductor template having a nitride semiconductor layer that exhibits superior crystal quality and effectively suppresses the occurrence of surface cracking, as well as provide a method for manufacturing the same, and an ultraviolet LED including said nitride semiconductor template. [Solution] Provided, as one embodiment, is a nitride semiconductor template 1 having: a substrate 10 having Ga2O3 as a main constituent; a buffer layer 11 formed on the substrate 10 and having AlN as a main constituent; an interface resistance reduction layer 12 formed on the buffer layer 11 and having AlxGa1-xN (where, 0.1≤x≤0.4) as a main constituent; a stress mitigating layer 13 formed on the interface resistance reduction layer 11 and having AlyGa1-yN (where, 0.5