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1. (WO2017150158) METHOD FOR POLISHING SILICON SUBSTRATE AND POLISHING COMPOSITION SET
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Pub. No.: WO/2017/150158 International Application No.: PCT/JP2017/005140
Publication Date: 08.09.2017 International Filing Date: 13.02.2017
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01) ,C09K 3/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
Applicants:
株式会社フジミインコーポレーテッド FUJIMI INCORPORATED [JP/JP]; 愛知県清須市西枇杷島町地領二丁目1番地1 1-1, Chiryo 2-chome, Nishibiwajima-cho, Kiyosu-shi, Aichi 4528502, JP
Inventors:
高見 信一郎 TAKAMI, Shinichiro; JP
川▲崎▼ 雄介 KAWASAKI, Yusuke; JP
Agent:
安部 誠 ABE Makoto; JP
Priority Data:
2016-03906601.03.2016JP
Title (EN) METHOD FOR POLISHING SILICON SUBSTRATE AND POLISHING COMPOSITION SET
(FR) PROCÉDÉ DE POLISSAGE DE SUBSTRAT DE SILICIUM, ET ENSEMBLE DE COMPOSITION POUR POLISSAGE
(JA) シリコン基板の研磨方法および研磨用組成物セット
Abstract:
(EN) Provided are: a polishing method which is applicable in common to a plurality of silicon substrates that have resistivities different from each other; and a polishing composition set which is used in this polishing method. A silicon substrate polishing method according to the present invention comprises supplying of a first polishing slurry S1 and a second polishing slurry S2 in this order to a silicon substrate to be polished such that the polishing slurries are switched during the polishing of the silicon substrate. The first polishing slurry S1 contains abrasive grains A1 and a water-soluble polymer P1. The polishing efficiency of the first polishing slurry S1 is higher than the polishing efficiency of the second polishing slurry S2.
(FR) L’invention fournit un procédé de polissage applicable en commun à des substrats de silicium de divers types de résistances spécifiques mutuellement différentes, et un ensemble de composition pour polissage mettant en œuvre ce procédé de polissage. Le procédé de polissage de substrat de silicium de l’invention inclut une étape au cours de laquelle une première boue de polissage (S) et une seconde boue de polissage (S) alimentent en alternance au cours du polissage le substrat de silicium objet du polissage. Ladite première boue de polissage (S) comprend des grains abrasifs (A) et un polymère hydrosoluble (P). Les performances de polissage de ladite première boue de polissage (S) sont supérieures à celles de ladite seconde boue de polissage (S).
(JA) 互いに抵抗率の異なる複数種類のシリコン基板に共通して適用し得る研磨方法および該研磨方法に用いられる研磨用組成物セットが提供される。本発明により提供されるシリコン基板研磨方法は、研磨対象のシリコン基板に対し、第1研磨スラリーSおよび第2研磨スラリーSを、この順に、上記シリコン基板の研磨途中で切り替えて供給することを含む。上記第1研磨スラリーSは、砥粒Aおよび水溶性高分子Pを含有する。上記第1研磨スラリーSの研磨能率は、上記第2研磨スラリーSの研磨能率よりも高い。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)