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1. (WO2017150050) OXIDE SINTERED BODY AND SPUTTERING TARGET
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Pub. No.: WO/2017/150050 International Application No.: PCT/JP2017/003447
Publication Date: 08.09.2017 International Filing Date: 31.01.2017
IPC:
C04B 35/01 (2006.01) ,C23C 14/34 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
Applicants:
住友金属鉱山株式会社 SUMITOMO METAL MINING CO., LTD. [JP/JP]; 東京都港区新橋5-11-3 11-3, Shimbashi 5-chome, Minato-ku, Tokyo 1058716, JP
Inventors:
中山 徳行 NAKAYAMA, Tokuyuki; JP
西村 英一郎 NISHIMURA, Eiichiro; JP
松村 文彦 MATSUMURA, Fumihiko; JP
Agent:
正林 真之 SHOBAYASHI, Masayuki; JP
林 一好 HAYASHI, Kazuyoshi; JP
Priority Data:
2016-03718729.02.2016JP
Title (EN) OXIDE SINTERED BODY AND SPUTTERING TARGET
(FR) CORPS FRITTÉ D'OXYDE ET CIBLE DE PULVÉRISATION
(JA) 酸化物焼結体及びスパッタリング用ターゲット
Abstract:
(EN) Provided is a sputtering target with which it is possible to manufacture an amorphous or crystalline oxide semiconductor thin film with an annealing treatment at a lower temperature than previously, said oxide semiconductor thin film comprising indium and gallium and having a high carrier mobility. Also provided is an oxide sintered body comprising indium and gallium, said oxide sintered body being optimal for obtaining said sputtering target. An oxide sintered body comprising oxides of indium and gallium, wherein the oxide sintered body is characterized by having a gallium content according to the atomic ratio Ga/(In+Ga) of 0.10 to 0.49, having a CIE 1976 color space L* value of 50 to 68, and being composed of an In2O3 phase with a bixbyite-type structure and, as a formation phase other than the In2O3 phase, a GaInO3 phase with a β-Ga2O3-type structure, or a GaInO3 phase with a β-Ga2O3-type structure and a (Ga, In)2O3 phase.
(FR) L'invention concerne une cible de pulvérisation avec laquelle il est possible de fabriquer un film mince semi-conducteur d'oxyde amorphe ou cristallin avec un traitement de recuit à une température plus basse que précédemment, ledit film mince semi-conducteur d'oxyde comprenant de l'indium et du gallium et présentant une grande mobilité de porteur de charge. L'invention concerne également un corps fritté d'oxyde comprenant de l'indium et du gallium, ledit corps fritté d'oxyde étant optimal pour obtenir ladite cible de pulvérisation. L'invention concerne un corps fritté d'oxyde comprenant des oxydes d'indium et de gallium, ledit corps fritté d'oxyde étant caractérisé en ce qu'il présente une teneur en gallium selon le rapport atomique Ga/(In+Ga) de 0,10 à 0,49, en ce qu'il présente une valeur d'espace colorimétrique CIE L* 1976 de 50 à 68, et en ce qu'il est composé d'une phase In2O3 ayant une structure de type bixbyite et, comme phase de formation autre que la phase In2O3, une phase GaInO3 ayant une structure de type β-Ga2O3, ou une phase GaInO3 ayant une structure de type β-Ga2O3 et une phase (Ga, In)2O3.
(JA) 高いキャリア移動度を有するインジウム及びガリウムからなる非晶質あるいは結晶質の酸化物半導体薄膜の製造が、従来と比較してより低い温度のアニール処理で可能になるスパッタリング用ターゲット、それを得るのに最適なインジウム及びガリウムからなる酸化物焼結体を提供すること。 インジウム、及びガリウムの酸化物からなる酸化物焼結体であって、ガリウムの含有量がGa/(In+Ga)原子数比で0.10以上0.49以下であり、CIE1976表色系におけるL値が50以上68以下であって、ビックスバイト型構造のIn相と、In相以外の生成相としてβ-Ga型構造のGaInO相、あるいはβ-Ga型構造のGaInO相と(Ga,In)相によって構成されることを特徴とする酸化物焼結体である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)